Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Ku, K. C."'
Autor:
Cumings, J., Moore, L. S., Chou, H. T., Ku, K. C., Crooker, S. A., Samarth, N., Goldhaber-Gordon, D.
We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas osci
Externí odkaz:
http://arxiv.org/abs/cond-mat/0512730
Autor:
Ku, K. C., Wang, S. H. Chun. W. H., Fadgen, W., Issadore, D. A., Samarth, N., Epstein, R. J., Awschalom, D. D.
We describe the growth of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on (110) GaAs substrates. Unlike the well-known protocol for the epitaxy of ZnSe-based quantum structures on (001) GaAs, we find that the fabrication of quantum well structures o
Externí odkaz:
http://arxiv.org/abs/cond-mat/0505016
Autor:
Eid, K. F., Stone, M. B., Maksimov, O., Shih, T. C., Ku, K. C., Fadgen, W., Palmstrom, C. J., Schiffer, P., Samarth, N.
Publikováno v:
J. Appl. Phys. 97, art. no. 10D304 (2005)
We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherf
Externí odkaz:
http://arxiv.org/abs/cond-mat/0505015
Autor:
Panguluri, R. P., Ku, K. C., Wojtowicz, T., Liu, X., Furdyna, J. K., Lyanda-Geller, Y. B., Samarth, N., Nadgorny, B.
We investigate the applicability of spin polarization measurements using Andreev reflection in a point contact geometry in heavily doped dilute magnetic semiconductors, such as (Ga,Mn)As. While we observe conventional Andreev reflection in non-magnet
Externí odkaz:
http://arxiv.org/abs/cond-mat/0502536
Publikováno v:
Phys. Rev. B 72, 041302(R) (2005)
We use time-resolved Kerr rotation to demonstrate the optical and electronic tuning of both the electronic and local moment (Mn) spin dynamics in electrically gated parabolic quantum wells derived from II-VI diluted magnetic semiconductors. By changi
Externí odkaz:
http://arxiv.org/abs/cond-mat/0411492
Autor:
Eid, K. F., Stone, M. B., Ku, K. C., Schiffer, P., Samarth, N., Shih, T. C., Palmstrom, C. J.
Publikováno v:
Appl. Phys. Lett. 85, 1556 (2004).
We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (T_B = 48 +- 2 K) and the Cu
Externí odkaz:
http://arxiv.org/abs/cond-mat/0312259
We have studied the effects of capping ferromagnetic Ga(1-x)Mn(x)As epilayers with a thin layer of undoped GaAs, and we find that even a few monolayers of GaAs have a significant effect on the ferromagnetic properties. In particular, the presence of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0307255
Autor:
Potashnik, S. J., Ku, K. C., Chun, S. H., Wang, R. F., Stone, M. B., Samarth, N., Schiffer, P.
Publikováno v:
J. Appl. Phys. 93, 6784 (2003)
We have studied the field dependence of the magnetization in epilayers of the diluted magnetic semiconductor Ga(1-x)Mn(x)As for 0.0135 < x < 0.083. Measurements of the low temperature magnetization in fields up to 3 T show a significant deficit in th
Externí odkaz:
http://arxiv.org/abs/cond-mat/0212260
Autor:
Ku, K. C., Potashnik, S. J., Wang, R. F., Seong, M. J., Johnston-Halperin, E., Meyers, R. C., Chun, S. H., Mascarenhas, A., Gossard, A. C., Awschalom, D. D., Schiffer, P., Samarth, N.
Publikováno v:
Appl. Phys. Lett. 82, 2302 (2003)
We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman scattering) show
Externí odkaz:
http://arxiv.org/abs/cond-mat/0210426
Publikováno v:
Phys. Rev. B 66, 100408(R) (2002)
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epita
Externí odkaz:
http://arxiv.org/abs/cond-mat/0207178