Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Kshitij Auluck"'
Autor:
Yingqiu Cao, Krishna Jayant, Kshitij Auluck, Edwin C. Kan, Joshua B. Phelps, Philip H. Gordon
Publikováno v:
IEEE Sensors Journal. 16:3367-3373
To assist the design process of nonfaradaic electrochemical sensors in realistic biological media, we examine multiple types of sensing operations in polyelectrolytes. By comparing the quasi-static transconductance, impedance spectroscopy, and capaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69358e91104ad2f7cc21e24278e77bb5
https://doi.org/10.1109/jsen.2015.2445292
https://doi.org/10.1109/jsen.2015.2445292
Autor:
Edwin C. Kan, Kshitij Auluck
Publikováno v:
IEEE Transactions on Electron Devices. 63:637-642
We present a detailed analysis of hybrid ferroelectric (FE)-CMOS nonvolatile latches, based on simulations with the unified physical circuit model from Part-I and experimental verification with circuit measurements. Hybrid FE-CMOS latches are categor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e012ce76009264376d113bf066b89268
https://doi.org/10.1109/ted.2015.2506644
https://doi.org/10.1109/ted.2015.2506644
Autor:
Edwin C. Kan, Kshitij Auluck
Publikováno v:
IEEE Transactions on Electron Devices. 63:631-636
We present a physical circuit model of ferroelectric (FE) polarization switching for the analysis and design of hybrid FE-CMOS circuits. Stochastic geometry is applied to domain nucleation, growth, and coalescence under arbitrary voltage and current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b3fd4d210f6b36cb625e207f711df90
https://doi.org/10.1109/ted.2015.2506632
https://doi.org/10.1109/ted.2015.2506632
Publikováno v:
IEEE Transactions on Electron Devices. 60:3378-3384
This paper presents a physical model for program and retention transients in ferroelectric (FE) and charge hybrid nonvolatile memory. A region-by-region statistical model for domain switching in polycrystalline FEs was incorporated with the tunneling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cfbdb0f242eee655c5c566449bd798d
https://doi.org/10.1109/ted.2013.2279259
https://doi.org/10.1109/ted.2013.2279259
Autor:
Krishna Jayant, R. B. van Dover, Kshitij Auluck, Shantanu R. Rajwade, Edwin C. Kan, Taro A. Naoi
Publikováno v:
IEEE Transactions on Electron Devices. 60:1944-1950
This paper presents a novel one-transistor low-voltage DRAM-Flash hybrid memory. The proposed device integrates ferroelectric thin film and nonvolatile charge injection, and demonstrates two modes of operations: 1) a fast (10-100 ns) DRAM mode with ~
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d298912965d3dc9e4f74acc19fb94848
https://doi.org/10.1109/ted.2013.2257787
https://doi.org/10.1109/ted.2013.2257787
Autor:
Jonathan T. Shaw, Shantanu R. Rajwade, Joshua B. Phelps, Edwin C. Kan, Keith G. Lyon, Kshitij Auluck
Publikováno v:
IEEE Transactions on Electron Devices. 59:450-458
Part I of this article introduced the concept and operation of the novel hybrid memory, integrating ferroelectric polarization and nonvolatile charge injection. In Part II, we demonstrate the experimental validation of this hybrid design. One-transis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d52901c597e16903cedfab14d7b0a35
https://doi.org/10.1109/ted.2011.2175397
https://doi.org/10.1109/ted.2011.2175397
Autor:
Jonathan T. Shaw, Keith G. Lyon, Kshitij Auluck, Joshua B. Phelps, Edwin C. Kan, Shantanu R. Rajwade
Publikováno v:
IEEE Transactions on Electron Devices. 59:441-449
We present a new one-transistor hybrid nonvolatile memory based on the combination of two distinctive mechanisms, namely, remanent polarization in ferroelectrics and charge injection into floating nodes. The gate stack design and the memory operation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32c1bbe09f2fb0c93d585de9cf58fe89
https://doi.org/10.1109/ted.2011.2175396
https://doi.org/10.1109/ted.2011.2175396
Autor:
Yingqui Cao, Philip H. Gordon, Krishna Jayant, Joshua B. Phelps, Edwin C. Kan, Kshitij Auluck
To improve field use of ISFET devices for biological and chemical sensing, we present a parameter extraction model based on the correlation between multiple experiments in polyelectrolyte media. By correlating the quasistatic transconductance, impeda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bef1c45be599a068dc62c21d2c0ff14d
https://zenodo.org/record/1271664
https://zenodo.org/record/1271664
Publikováno v:
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We present a physical circuit model for polarization reversal dynamics in ferroelectrics, which is implemented in Verilog-A, validated with PZT measurements and applicable in all operation modes for bulk, epitaxial and polycrystalline thin films. Con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80c50668793bbb3285476ad94f42f177
https://doi.org/10.1109/sispad.2014.6931585
https://doi.org/10.1109/sispad.2014.6931585
Publikováno v:
Physical Review E. 89
We report on factors that affect DNA hybridization detection using ion-sensitive field-effect transistors (ISFETs). Signal generation at the interface between the transistor and immobilized biomolecules is widely ascribed to unscreened molecular char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c223d040fcac9b67e1073a7eea43460
https://doi.org/10.1103/physreve.89.052817
https://doi.org/10.1103/physreve.89.052817