Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Ksenia Nosaeva"'
Autor:
Viktor Krozer, T. Shivan, Ralf Doerner, Ksenia Nosaeva, Maruf Hossain, Tom K. Johansen, Hady Yacoub, Wolfgang Heinrich
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
This work presents an SPDT switch with more than 235 GHz bandwidth, fabricated using 800 nm InP DHBT technology. Three cascaded shunt stages were used to achieve high isolation and relatively large transistors within the 90–325 GHz operating range.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3770d646bf2df417506c496a5204e4ac
https://doi.org/10.1109/ims30576.2020.9223920
https://doi.org/10.1109/ims30576.2020.9223920
Autor:
Sebastian Boppel, Viktor Krozer, Ina Ostermay, Ksenia Nosaeva, Colombo R. Bolognesi, M. Matalla, Nicole Volkmer, Olivier Ostinelli, Tom K. Johansen, M. Brahem, Nils Weimann, D. Stoppel
Publikováno v:
IEEE Transactions on Electron Devices. 65:3704-3710
We report on the realization mymargin of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4- $\mu \text{m}$ -wide single emitters reached unilateral g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a1e433a23c8bffa5d3e5f920c32247
https://doi.org/10.1109/ted.2018.2854546
https://doi.org/10.1109/ted.2018.2854546
Autor:
Ksenia Nosaeva, Viktor Krozer, B. Janke, Olaf Krüger, Matthias Rudolph, Thualfiqar Al-Sawaf, Nils Weimann, Dimitri Stoppel, W. Heinrich, Wilfred John, F.J. Schmuckle
Publikováno v:
IEEE Transactions on Electron Devices. 63:1846-1852
The RF power output of scaled subterahertz and terahertz indium phosphide double-heterostructure bipolar transistors (InP DHBTs) is limited by the thermal device resistance, which increases with the geometrical frequency scaling of these devices. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6ebe85061f6fd5ddb92f21a16a84298
https://doi.org/10.1109/ted.2016.2533669
https://doi.org/10.1109/ted.2016.2533669
Autor:
Ksenia Nosaeva, D. Berger, D. Rentner, Maria Reiner, Anna Mogilatenko, M. Brahem, Ina Ostermay, Nils Weimann, Sebastian Boppel, S. Hochheim, D. Stoppel
Publikováno v:
Microelectronic Engineering. 215:111017
We report on surface pretreatment for ohmic contacts to p-doped In0.53Ga0.47 As with improved thermal stability. It is found that the cleaning of In0.53Ga0.47 As surface by ammonium sulfide or sulfuric acid offers the optimum surface treatment prior
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7bb3bf14ab70feb20864bff849a3404
https://doi.org/10.1016/j.mee.2019.111017
https://doi.org/10.1016/j.mee.2019.111017
Publikováno v:
Electronics Letters. 51:1010-1012
A method to improve the thermal management of indium phosphide (InP) double-hetero bipolar transistors (DHBTs) fabricated in a transferred-substrate technology is presented. A vapour-phase deposited diamond layer acting as a heat spreader is heteroge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b78023ba6bf55fcbe5d2fba99771354
https://doi.org/10.1049/el.2015.1135
https://doi.org/10.1049/el.2015.1135
A power amplifier in 800 nm transferred-substrate InP DHBT technology is presented in this paper. The technology used in this work features an integrated diamond heat sink layer that has significant impact on the reduction of thermal resistance. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64ed9be21057b107e78427627a1ab5d5
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84985011730
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84985011730
This letter presents a G-band balanced frequency doubler with high output power, realized using a 800 nm transferred-substrate InP-HBT process. The doubler delivers $5\ {\rm dBm} \pm 3$ dBm in the range 140–220 GHz. The dc consumption is only 41 mW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e50a81bae92002aa38bf29aedfa9419
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84973138154
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84973138154
This paper presents a wideband 330 GHz frequency quadrupler using 0.8 µm transferred substrate (TS) InP-HBT technology. The process includes a heat-spreading diamond layer, which improves the power handling capability of the circuit. The quadrupler
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d899e3ecac522cd428b9dbcc4606849b
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84985023500
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84985023500
Autor:
Maruf Hossain, Viktor Krozer, W. Heinrich, Nils Weimann, B. Janke, Ksenia Nosaeva, O. Krueger
This paper presents a single-ended efficient 290 GHz harmonic oscillator, realized using 0.8 µm transferred-substrate (TS) InP-DHBT technology. The architecture of this oscillator is based on a third harmonic generation from a fundamental differenti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8466e69a336cf581940bd1acb5360fec
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84964329582
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=84964329582