Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Krzysztof Piskorski"'
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
Distributions of the gate-dielectric EBG(x, y) and semiconductor-dielectric EBS(x, y) barrier height values have been determined using the photoelectric measurement method. Modified Powell-Berglund method was used to measure barrier height values. Mo
Externí odkaz:
https://doaj.org/article/b40c3bf2784c416ba8669b13f885cdc4
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
The photoelectric techniques are often used for the measurements of metal oxide semiconductor (MOS) structure parameters. These methods, which consist in illuminating the MOS structure with a semitransparent metal gate by a UV light beam, are often c
Externí odkaz:
https://doaj.org/article/eb2c033543994857af385c13b7a9fe7f
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055315-055315-9 (2020)
Effects of aluminum (Al) and nitrogen (N) implantation performed at room and at elevated (500 °C) temperatures on epitaxial n-type 4H polytype silicon carbide as well as post-implantation annealing have been studied by Raman scattering spectroscopy.
Externí odkaz:
https://doaj.org/article/8770e43d11fe47ff9116d65f2f1ce105
Autor:
Dorota Pierścińska, Kamil Pierściński, Grzegorz Sobczak, Katarzyna Krajewska, Krzysztof Chmielewski, Aleksandr Kuźmicz, Krzysztof Piskorski, Piotr Gutowski
Publikováno v:
Materials, Vol 14, Iss 23, p 7352 (2021)
In this paper, we have examined the influence of electroplated gold thickness on the thermal and electro-optical properties of mid-IR AlInAs/InGaAs, InP QCLs. The experimental results show a significant reduction of the temperature of QCL active regi
Externí odkaz:
https://doaj.org/article/9ebd4196ebb2410080acdec891360e62
Autor:
Krzysztof Piskorski
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2005)
In this work, we have compared the barrier height measurements carried out using the Powell method with the photoelectric effective contact potential difference (φMS) measurement results. The photoelectric measurements were performed on the samples
Externí odkaz:
https://doaj.org/article/fa911c727ec9425f94a34cd6c22de8f4
Autor:
Andrzej Taube, Michał A. Borysiewicz, Oskar Sadowski, Aleksandra Wójcicka, Jarosław Tarenko, Krzysztof Piskorski, Marek Wzorek
Publikováno v:
Materials Science in Semiconductor Processing. 154:107218
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39e0cd630a04b3a75a9db3c661e030e2
https://doi.org/10.1016/j.mssp.2022.107218
https://doi.org/10.1016/j.mssp.2022.107218
Autor:
Aleksandr Kuźmicz, Krzysztof Piskorski, Katarzyna Krajewska, Grzegorz Sobczak, Kamil Pierściński, Dorota Pierścińska, Krzysztof Chmielewski, Piotr Gutowski
Publikováno v:
Materials
Materials, Vol 14, Iss 7352, p 7352 (2021)
Materials; Volume 14; Issue 23; Pages: 7352
Materials, Vol 14, Iss 7352, p 7352 (2021)
Materials; Volume 14; Issue 23; Pages: 7352
In this paper, we have examined the influence of electroplated gold thickness on the thermal and electro-optical properties of mid-IR AlInAs/InGaAs, InP QCLs. The experimental results show a significant reduction of the temperature of QCL active regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01037387a9249cd0b93b58e8a1ebacbe
https://pubmed.ncbi.nlm.nih.gov/34885516
https://pubmed.ncbi.nlm.nih.gov/34885516
Autor:
Agata Jasik, Iwona Sankowska, Krzysztof Czuba, Jacek Ratajczak, Paweł Kozłowski, Andrzej Wawro, Dariusz Żak, Krzysztof Piskorski
Publikováno v:
Infrared Physics & Technology. 122:104109
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2f357900f222214f77cd430b562f182
https://doi.org/10.1016/j.infrared.2022.104109
https://doi.org/10.1016/j.infrared.2022.104109
Autor:
Krystyna Marta Stiller, Andrzej Taube, Jakub Kaczmarski, Marcin Mysliwiec, Krzysztof Piskorski, Eliana Kamińska, Michał A. Borysiewicz
Publikováno v:
IEEE Transactions on Electron Devices. 65:129-135
With the development of novel device applications, e.g., in the field of Internet of Things or point-of-care personalized diagnostic systems, came an increased demand for MESFETs for fast and low-power consumption integrated circuits and active-matri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::467cf96ed4e1b3db51fc2a7ed515a013
https://doi.org/10.1109/ted.2017.2658939
https://doi.org/10.1109/ted.2017.2658939
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055315-055315-9 (2020)
Effects of aluminum (Al) and nitrogen (N) implantation performed at room and at elevated (500 °C) temperatures on epitaxial n-type 4H polytype silicon carbide as well as post-implantation annealing have been studied by Raman scattering spectroscopy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::679a2841423dd535e49d93e8f1f1c51c
https://doi.org/10.1063/1.5144579
https://doi.org/10.1063/1.5144579