Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Krzysztof Nauka"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:566-571
Structural and chemical compositional changes occurring within the surface region of an organic photoconductor electrically charged with Paschen discharge over an extended period of time have been investigated with the help of attenuated total reflec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb356a5703801933fba6b8d936e302a7
https://doi.org/10.1116/1.3122632
https://doi.org/10.1116/1.3122632
Publikováno v:
NIP & Digital Fabrication Conference. 25:204-207
Prolonged exposure of a commercial organic photoconductor in a plasma environment corresponding to an industrial electrophotographic process caused the formation of a parasitic surface layer with properties that are different from the original photoc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e7b87604a7b89d9b52f25e8ca9365cb
https://doi.org/10.2352/issn.2169-4451.2009.25.1.art00058_1
https://doi.org/10.2352/issn.2169-4451.2009.25.1.art00058_1
Autor:
Valerie J. Leppert, Chung-Ching Yang, Jacek Jasinski, Krzysztof Nauka, Zhang-Lin Zhou, Gary Gibson, Si-Ty Lam
Publikováno v:
Solid State Communications. 141:624-627
InP nanoparticles (NPs) in the size range of 1.5–3 nm were synthesized using colloidal chemistry methods. Exposure of these NPs to air resulted in rapid oxidation, as shown by transmission electron microscopy. Diffraction and spectroscopic measurem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0beec9528fca861b8b31813156458fb
https://doi.org/10.1016/j.ssc.2006.12.033
https://doi.org/10.1016/j.ssc.2006.12.033
Autor:
Gary Gibson, Bao S. Yeh, Alison Chaiken, Chung-Ching Yang, John Chen, D. D. Lindig, Zuzanna Liliental-Weber, Sharath Subramanian, Jacek Jasinski, Krzysztof Nauka
Publikováno v:
Japanese Journal of Applied Physics. 45:2580-2592
We demonstrate a data read-back scheme based on electron-beam induced current in a data storage device that utilizes thermal recording onto a phase-change medium. The phase-change medium is part of a heterojunction diode whose local charge-collection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68599aedf8826d7129e59c7d6652e08f
https://doi.org/10.1143/jjap.45.2580
https://doi.org/10.1143/jjap.45.2580
Publikováno v:
MRS Proceedings. 1270
Copper phthalocyanine (CuPc) belongs to a class of small molecules offering particularly interesting advantages when employed in organic electronic devices. Because of its advantageous attributes like high thermal stability, inertness when exposed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8e70ec450a1acbaf048b22983dd8420
https://doi.org/10.1557/proc-1270-hh14-33
https://doi.org/10.1557/proc-1270-hh14-33
Autor:
Lihua Zhao, Zhang-Lin Zhou, Xia Sheng, James A. Brug, Si-Ty Lam, Gary Gibson, Krzysztof Nauka
Publikováno v:
MRS Proceedings. 1154
Polymer light-emitting diodes (PLEDs) show great promise of revolutionizing display technologies. The archetypical multilayer PLED heterostructure introduces numerous chemical and physical challenges to the develoment of efficient and robust devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b998040710e1aca03d31819871f745be
https://doi.org/10.1557/proc-1154-b10-108
https://doi.org/10.1557/proc-1154-b10-108
Autor:
Charles C. Liu, Krzysztof Nauka
Publikováno v:
Journal of The Electrochemical Society. 138:2367-2370
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55a218d9d100e750b566e8469387764d
https://doi.org/10.1149/1.2085977
https://doi.org/10.1149/1.2085977
Autor:
Chung-Ching Yang, Krzysztof Nauka, Jacek B. Jasinski, Gary Gibson, Alison Chaiken, Zuzanna Liliental-Weber, R. Bicknell
Publikováno v:
MRS Proceedings. 803
High quality growth of InSe on Si(111) was achieved by insertion of GaSe buffer layer. Rhombohedral polytypes were formed in both the InSe and GaSe layers. Twinning and stacking disorder was often detected in these materials due to their layered stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a23b0b7339ce4c021dd7458738966b84
https://doi.org/10.1557/proc-803-gg4.5
https://doi.org/10.1557/proc-803-gg4.5
Publikováno v:
SPIE Proceedings.
Partially strained SiiGe epilayers with germanium composition up to 25% have been studied by room temperaturephotoreflectance spectroscopy. Observed transitions were identified as E1 and E0' direct transitions at SiiGe structure.The E1 transition ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc21d48a3fa9f6391381f83454a3569f
https://doi.org/10.1117/12.344737
https://doi.org/10.1117/12.344737
Autor:
Krzysztof Nauka
Publisher Summary This chapter describes deep level defects in epitaxial III/V materials. Epitaxial III/V materials play an increasingly important role in a variety of electronic, optoelectronic, and optical applications. The development of new epita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb9535d4a2184418746d1f3420caa9e7
https://doi.org/10.1016/s0080-8784(08)62804-5
https://doi.org/10.1016/s0080-8784(08)62804-5
