Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Krzesimir Nowakowski-Szkudlarek"'
Autor:
Kinga Majkowycz, Krzysztof Murawski, Małgorzata Kopytko, Krzesimir Nowakowski-Szkudlarek, Marta Witkowska-Baran, Piotr Martyniuk
Publikováno v:
Nanomaterials, Vol 14, Iss 19, p 1612 (2024)
The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching an
Externí odkaz:
https://doaj.org/article/57318bb9090b40a283e2e657222c7ae1
Autor:
Mikołaj Żak, Grzegorz Muziol, Marcin Siekacz, Artem Bercha, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Artur Lachowski, Mikołaj Chlipała, Paweł Wolny, Henryk Turski, Czesław Skierbiszewski
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-11 (2023)
Abstract Gallium nitride-based light-emitting diodes have revolutionized the lighting market by becoming the most energy-efficient light sources. However, the power grid, in example electricity delivery system, is built based on alternating current,
Externí odkaz:
https://doaj.org/article/df2544d985474f0db23f6d9bbbc09288
Autor:
Mateusz Hajdel, Mikolaj Chlipała, Marcin Siekacz, Henryk Turski, Paweł Wolny, Krzesimir Nowakowski-Szkudlarek, Anna Feduniewicz-Żmuda, Czeslaw Skierbiszewski, Grzegorz Muziol
Publikováno v:
Materials, Vol 15, Iss 1, p 237 (2021)
The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in In
Externí odkaz:
https://doaj.org/article/839c1d35ff194958a2558184c647287d
Autor:
Julita Smalc-Koziorowska, P. Wolny, Czeslaw Skierbiszewski, A. Feduniewicz-Żmuda, Marta Sawicka, Krzesimir Nowakowski-Szkudlarek, Henryk Turski, M. Kryśko, Natalia Fiuczek
Publikováno v:
Crystal Growth & Design. 21:5223-5230
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3cb7ebf284e1009ddbc8a65c9b3b123
https://doi.org/10.1021/acs.cgd.1c00560
https://doi.org/10.1021/acs.cgd.1c00560
Autor:
Mateusz Hajdel, Mikolaj Chlipala, Henryk Turski, Marcin Siekacz, Pawel Wolny, Krzesimir Nowakowski-Szkudlarek, Anna Feduniewicz-Zmuda, Czeslaw Skierbiszewski, Grzegorz Muziol
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee488d59696d736cd434dc10b8187454
https://doi.org/10.1109/csw55288.2022.9930350
https://doi.org/10.1109/csw55288.2022.9930350
Autor:
Henryk Turski, Mikolaj Chlipala, Marcin Siekacz, Grzegorz Muziol, Mikolaj Zak, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Len H. van Deurzen, Huili Grace . Xing, Debdeep Jena, Czeslaw Skierbiszewski
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4f4fc593b24224fb1f78dbccbb35cd8
https://doi.org/10.1117/12.2608281
https://doi.org/10.1117/12.2608281
Autor:
Henryk Turski, P. Wolny, Natalia Fiuczek, Marta Sawicka, Czeslaw Skierbiszewski, A. Feduniewicz-Żmuda, Marcin Siekacz, Krzesimir Nowakowski-Szkudlarek, Grzegorz Muziol
Publikováno v:
Nanoscale. 12:6137-6143
Typical methods of doping quantification are based on spectroscopy or conductivity measurements. The spatial dopant distribution assessment with nanometer-scale precision is limited usually to one or two dimensions. Here we demonstrate an approach to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39eb12e95b0c0c1574c1e2c775c87685
https://doi.org/10.1039/c9nr10968d
https://doi.org/10.1039/c9nr10968d
Autor:
Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek, Mateusz Hajdel, Marcin Siekacz, Anna Feduniewicz-Żmuda, Krzesimir Nowakowski-Szkudlarek, Paweł Wolny, Mikołaj Żak, Henryk Turski, Czesław Skierbiszewski
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84e41c371c47bac5ba2d61c5835e13f3
http://arxiv.org/abs/2201.03939
http://arxiv.org/abs/2201.03939
Autor:
P. Wolny, Krzesimir Nowakowski-Szkudlarek, Czeslaw Skierbiszewski, A. Feduniewicz-Żmuda, Grzegorz Muziol, Mateusz Hajdel, Marcin Siekacz
Publikováno v:
Acta Physica Polonica A. 136:593-597
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96d1344830a3715f4c98199bb11b7946
https://doi.org/10.12693/aphyspola.136.593
https://doi.org/10.12693/aphyspola.136.593
Autor:
Ewa Grzanka, Czeslaw Skierbiszewski, P. Wolny, A. Feduniewicz-Żmuda, Henryk Turski, Mateusz Hajdel, Julita Smalc-Koziorowska, P. Perlin, Marcin Siekacz, Krzesimir Nowakowski-Szkudlarek, Grzegorz Muziol, Piotr Wiśniewski
Publikováno v:
Materials Science in Semiconductor Processing. 91:387-391
In this paper the reliability of III-nitride blue laser diodes grown by plasma-assisted molecular beam epitaxy on low threading dislocation density Ammono-GaN substrates is studied. It is found that defects formed in the heavily Mg-doped electron blo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d4219a34733c9ca6cf7c15785abf6e7
https://doi.org/10.1016/j.mssp.2018.12.011
https://doi.org/10.1016/j.mssp.2018.12.011