Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Kryuchenko, Yu.V."'
Autor:
Kryuchenko, Yu.V., Korbutyak, D.V.
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures October 2016 84:209-215
Autor:
Kryuchenko, Yu.V., Sachenko, A.V., Bobyl, A.V., Kostylyov, V.P., Sokolovskyi, I.O., Terukov, E.I., Tokmoldin, N., Tokmoldin, S. Zh., Smirnov, A.V.
Publikováno v:
In Energy Policy May 2014 68:116-122
Autor:
Medvid’, A. *, Korbutyak, D.V., Krylyuk, S.G., Kryuchenko, Yu.V., Kuznetsov, E.I., Kupchak, I.M., Fedorenko, L.L., Hlidek, P.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 21 September 2004 531(1-2):157-160
Publikováno v:
In Journal of Alloys and Compounds 26 May 2004 371(1-2):142-145
Autor:
Sachenko, A.V.1, Kryuchenko, Yu.V.1 div47@isp.kiev.ua
Publikováno v:
Semiconductors. Jan2004, Vol. 38 Issue 1, p99-106. 8p.
Autor:
Kryuchenko, Yu.V., Korbutyak, D.V.
Proposed in this work is a theoretical model that enables to correctly calculate light emission characteristics of a hybrid nanosystem formed by a spherical semiconductor quantum dot (QD) and spherical metal nanoparticle (NP) when QD is excited by li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::0829d94100750d4901a88598ca463bcf
http://dspace.nbuv.gov.ua/handle/123456789/117730
http://dspace.nbuv.gov.ua/handle/123456789/117730
Autor:
Kryuchenko, Yu.V., Sachenko, A.V., Bobyl, A.V., Kostylyov, V.P., Romanets, P.N., Sokolovskyi, I.O., Shkrebti, A.I., Terukov, E.I.
We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the p i n sandwich in terms of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::68f28024dbd8e2050b543c48cee2e5d6
http://dspace.nbuv.gov.ua/handle/123456789/118286
http://dspace.nbuv.gov.ua/handle/123456789/118286
An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. Numerical calculations are m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::8dd5ce0faef2dc633d76b17eb51b03db
http://dspace.nbuv.gov.ua/handle/123456789/121578
http://dspace.nbuv.gov.ua/handle/123456789/121578
Autor:
Sachenko, A.V., Gorban, A.P., Korbutyak, D.V., Kostylyov, V.P., Kryuchenko, Yu.V., Chernenko, V.V.
A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen temperatures. Maximal values
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::d229bed6899866e7bb3de0cdb5edc0fe
http://dspace.nbuv.gov.ua/handle/123456789/118104
http://dspace.nbuv.gov.ua/handle/123456789/118104
We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within effective mass and classical im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::fc3661c5cec396a6ffd224eabef50b22
http://dspace.nbuv.gov.ua/handle/123456789/118013
http://dspace.nbuv.gov.ua/handle/123456789/118013