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pro vyhledávání: '"Krunal V. Patel"'
Autor:
Krunal V. Patel, Krunalkumar D. Shah
Publikováno v:
International Journal of Research in Advent Technology. 7:125-128
Publikováno v:
IEEE Transactions on Electron Devices. 62:2542-2548
Distribution and intensity of electrostatic field in a trench insulated gate bipolar transistor, a key factor in the breakdown of such power semiconductor devices, are investigated using the variational thermodynamic methodology based on device Helmh
Publikováno v:
2015 China Semiconductor Technology International Conference.
The Trench Insulated Gate Bipolar Transistor (TIGBT) has become of central importance in high power high switching speed applications. Breakdown in these devices is strongly influenced, among other factors, by subtle details of trench geometry, espec
Publikováno v:
2014 International Conference on Circuits, Systems, Communication and Information Technology Applications (CSCITA).
Finite Element modeling of the electrostatic behavior of semiconductor electronic devices has been a work-horse of top-level design for generations. Commercial off-the-shelf Finite Element code packages are readily available which afford the user con