Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Krukovskii R. S."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2-3, Pp 61-65 (2014)
The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80—120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions. A method of forming qualita
Externí odkaz:
https://doaj.org/article/3fe37ba484924f359cdf6be39949503b
Autor:
Vakiv N. M., Krukovskii S. I., Sukach A. V., Tetyorkin V. V., Mrykhin I. A., Mikhashchuk Yu. S., Krukovskii R. S.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2, Pp 27-30 (2012)
The double epitaxial p+-InP/n-InGaAsP/n-InP heterostructures with coinciding electrical and metallurgical boundaries has been obtained. Such coincidence is achieved due to growing an additional buffer n-InP layer and decreasing the time for growing a
Externí odkaz:
https://doaj.org/article/5f481beab823400686992112cc0ff7fe