Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Krukovskii, S. P."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2-3, Pp 61-65 (2014)
The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80—120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions. A method of forming qualita
Externí odkaz:
https://doaj.org/article/3fe37ba484924f359cdf6be39949503b
Autor:
Vakiv N. M., Krukovskii S. I., Sukach A. V., Tetyorkin V. V., Mrykhin I. A., Mikhashchuk Yu. S., Krukovskii R. S.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2, Pp 27-30 (2012)
The double epitaxial p+-InP/n-InGaAsP/n-InP heterostructures with coinciding electrical and metallurgical boundaries has been obtained. Such coincidence is achieved due to growing an additional buffer n-InP layer and decreasing the time for growing a
Externí odkaz:
https://doaj.org/article/5f481beab823400686992112cc0ff7fe
Publikováno v:
Russian Chemical Bulletin; September 1982, Vol. 31 Issue: 9 p1765-1769, 5p
Publikováno v:
Russian Chemical Bulletin; November 1979, Vol. 28 Issue: 11 p2327-2330, 4p
Publikováno v:
Russian Chemical Bulletin; March 1979, Vol. 28 Issue: 3 p535-539, 5p
Publikováno v:
Russian Chemical Bulletin; October 1988, Vol. 37 Issue: 10 p2137-2141, 5p
Publikováno v:
Russian Chemical Bulletin; September 1976, Vol. 25 Issue: 9 p1845-1849, 5p
Publikováno v:
Russian Chemical Bulletin; April 1989, Vol. 38 Issue: 4 p836-840, 5p
Publikováno v:
Russian Chemical Bulletin; May 1979, Vol. 28 Issue: 5 p1045-1048, 4p
Publikováno v:
Russian Chemical Bulletin; July 1978, Vol. 27 Issue: 7 p1371-1375, 5p