Field Effect Transistors for Terahertz Detection and Emission

Autor: Wojciech Knap, Salman Nadar, Hadley Videlier, Stephane Boubanga-Tombet, Dominique Coquillat, Nina Dyakonova, Frederic Teppe, Kristoph Karpierz, Jerzy Łusakowski, Maciej Sakowicz, Irmantas Kasalynas, Dalius Seliuta, Gintaras Valusis, Taiichi Otsuji, Yahya Meziani, Abdel El Fatimy, Simon Vandenbrouk, Kamel Madjour, Didier Théron, Christophe Gaquière

Publikováno v: Journal of Infrared, Millimeter and Terahertz Waves
Journal of Infrared, Millimeter and Terahertz Waves, Springer Verlag, 2011, 32 (5), pp.618-628. ⟨10.1007/s10762-010-9647-7⟩
Journal of Infrared, Millimeter and Terahertz Waves, 2010, 32, pp.618-628. ⟨10.1007/s10762-010-9647-7⟩
Journal of Infrared, Millimeter and Terahertz Waves, Springer Verlag, 2010, 32, pp.618-628. ⟨10.1007/s10762-010-9647-7⟩

DOI = 10.1007/s10762-010-9647-7; Resonant frequencies of the two-dimensional plasma in field effect transistors (FETs) increase with the reduction of the channel dimensions and can reach the Terahertz (THz) range. Nonlinear properties of the plasma/e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28598895465a6b75f40339eaf6cd3cb7
https://hal.archives-ouvertes.fr/hal-00814487