Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Kristof Tahy"'
Autor:
Wan Sik Hwang, Pei Zhao, Kristof Tahy, Luke O. Nyakiti, Virginia D. Wheeler, Rachael L. Myers-Ward, Charles R. Eddy Jr., D. Kurt Gaskill, Joshua A. Robinson, Wilfried Haensch, Huili (Grace) Xing, Alan Seabaugh, Debdeep Jena
Publikováno v:
APL Materials, Vol 3, Iss 1, Pp 011101-011101-9 (2015)
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV. Contrary to prior observations of disordered transpor
Externí odkaz:
https://doaj.org/article/f6675ef631ae41bdac76276af5a6c515
Publikováno v:
Journal of Low Temperature Physics. 172:202-211
We present a study of the noise properties of single-layer exfoliated graphene as a function of gate bias. A tunnel/trap model is presented based on the interaction of graphene electrons with the underlying substrate. The model incorpo- rates trap po
Publikováno v:
International Journal of Circuit Theory and Applications. 41:603-607
One-dimensional nanostructures of graphene such as graphene nanoribbons (GNRs) can prove attractive for digital electronics in the form of interband tunneling transistors, as they are capable of high drive currents. Here, we report on the transport p
Autor:
Gregory V. Hartland, Huili Xing, Randall M. Feenstra, Luxmi, Chuanxin Lian, Li-Qiang Chu, Kristof Tahy, Libai Huang
Publikováno v:
Nano Letters. 10:1308-1313
Transient absorption microscopy was employed to image charge carrier dynamics in epitaxial multilayer graphene. The carrier cooling exhibited a biexponential decay that showed a significant dependence on carrier density. The fast and slow relaxation
Autor:
Rusen Yan, Debdeep Jena, Maja Remškar, Wan Sik Hwang, Huili Xing, Vladimir Protasenko, Soo Doo Chae, Kristof Tahy, Alan Seabaugh
Publikováno v:
70th Device Research Conference.
Spurred by the knowledge of isolation of graphene, other 2D transition-metal dichalcogenide materials in the form of MX 2 (where M=transition metal such as Mo, W, Ti, Nb, etc. and X=S, Se, or Te) have drawn considerable attention. The MX 2 family mat
Autor:
Rusen Yan, Tian Fang, Wan Sik Hwang, Huili Grace Xing, Michelle M. Kelly, Lei Liu, Debdeep Jena, Berardi Sensale-Rodriguez, Kristof Tahy
Publikováno v:
Nature Communications. 3
Terahertz technology promises myriad applications including imaging, spectroscopy and communications. However, one major bottleneck at present for advancing this field is the lack of efficient devices to manipulate the terahertz electromagnetic waves
Publikováno v:
Physical Review Letters. 106
We investigate high-field transport in graphene nanoribbons (GNRs) on SiO2, up to breakdown. The maximum current density is limited by self-heating, but can reach >3 mA/um for GNRs ~15 nm wide. Comparison with larger, micron-sized graphene devices re
Autor:
D. K. Gaskill, Alan Seabaugh, Kristof Tahy, Debdeep Jena, R. L. Myers-Ward, Paul M. Campbell, Wan Sik Hwang, Huili Grace Xing, C. R. Eddy, Joseph L. Tedesco
Publikováno v:
69th Device Research Conference.
Graphene is being investigated as a promising candidate for electronic devices. For digital electronic devices, a substantial bandgap is necessary. It is possible to open a bandgap in graphene by quantum confinement of the carriers in patterned graph
Autor:
Kristof Tahy, Tian Fang, Pei Zhao, Aniruddha Konar, Chuanxin Lian, Huili Grace, Michelle Kelly, Debdeep Je
Publikováno v:
Physics and Applications of Graphene-Experiments
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f65813cee73bfe1c5fc1ba1f519acce2
http://www.intechopen.com/articles/show/title/graphene-transistors
http://www.intechopen.com/articles/show/title/graphene-transistors