Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Kristina Driscoll"'
Publikováno v:
IEEE Journal of Photovoltaics. 4:1079-1085
The effects of delta-doping InAs quantum-dot (QD)-enhanced GaAs solar cells were studied both through modeling and device experimentation. Delta doping of two, four, and eight electrons per QD, as well as nine holes per QD, was used in this study. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a7bd00d92db55fe59cbbf837e239b0c
https://doi.org/10.1109/jphotov.2014.2316677
https://doi.org/10.1109/jphotov.2014.2316677
Autor:
Nickolas Vamivakas, Pradeep Waduge, Kelly L. Sowers, Todd D. Krauss, Kristina Driscoll, Meni Wanunu, Kenneth M. Goodfellow, Chitraleema Chakraborty
Publikováno v:
Frontiers in Optics 2016.
We explore the efficiency of energy transfer between colloidal quantum dots with a cadmium selenide core and cadmium sulfide shell and monolayer molybdenum diselenide (MoSe2), separating them by thin layers of hexagonal boron nitride (h-BN).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::823b2945af37b1fbef873795a6b00188
https://doi.org/10.1364/fio.2016.jw4a.136
https://doi.org/10.1364/fio.2016.jw4a.136
Autor:
Anirban Bhattacharyya, Yitao Liao, Lin Zhou, Theodore D. Moustakas, Faisal F. Sudradjat, Kristina Driscoll, Roberto Paiella, Christos Thomidis, Wei Zhang, David J. Smith
Publikováno v:
physica status solidi c. 9:588-591
We demonstrate electronic sequential tunneling transport through the ground-state subbands of GaN/Al0.15Ga0.85N quantum cascade structures grown on free-standing GaN substrates. A pronounced transition from a high- to a low-resistance state is observ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87ed453c41e3f60ea5361af0ca51217b
https://doi.org/10.1002/pssc.201100423
https://doi.org/10.1002/pssc.201100423
Autor:
Yitao Liao, Anirban Bhattacharyya, Lin Zhou, David J. Smith, Theodore D. Moustakas, Kristina Driscoll, Roberto Paiella
Publikováno v:
physica status solidi c. 7:2394-2397
Due to their large conduction-band offsets of up to 1.75 eV, GaN/Al(Ga)N quantum wells can support intersubband transitions at record short wavelengths, well into the low-loss transmission window of optical fibers. As a result, these quantum structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::286492590db3ea5e1b7fd9b03783415f
https://doi.org/10.1002/pssc.200983905
https://doi.org/10.1002/pssc.200983905
Publikováno v:
Journal of Crystal Growth. 278:387-392
AlN/GaN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0 0 0 1) sapphire substrates. Intersubband (ISB) absorption in the range of 1.5–1.9mm was investigated in these structures as a function of the main quantum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::360a51ff41af6c3f261aeedde9f16560
https://doi.org/10.1016/j.jcrysgro.2005.01.042
https://doi.org/10.1016/j.jcrysgro.2005.01.042
Autor:
Randy J. Ellingson, Staffan Hellstrom, Yushuai Dai, Seth M. Hubbard, David V. Forbes, Kristina Driscoll, Stephen J. Polly, Paul J. Roland
Publikováno v:
SPIE Proceedings.
The effects of electric field on carrier escape in InAs/GaAs quantum dots embedded in a p-i-n solar cell structures have been studied by quantum efficiency. Via band structure simulation, effective barrier height of carriers inside QDs is reduced wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2f56fe3e7ec0b9ea79b86bacf9148d4
https://doi.org/10.1117/12.2040153
https://doi.org/10.1117/12.2040153
Publikováno v:
Antisense and Nucleic Acid Drug Development. 11:327-332
We present data on efficient amplification of large number of DNA targets using a single-tube polymerase chain reaction (PCR). This is a further enhancement of our approach to multiplexed PCR based on PCR suppression, which allows multiple DNA amplif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06123abf6848856d9eb0be5d194a179d
https://doi.org/10.1089/108729001753231704
https://doi.org/10.1089/108729001753231704
Autor:
Kristina Driscoll, Chris Kerestes, Pravin Patel, Adam Podell, Paul Sharps, Benjamin C. Richards, Seth M. Hubbard, Yong Lin, David V. Forbes, Daniel Chumney
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
Lattice matched, triple-junction solar cells with strain-compensated quantum dots (QDs) in the GaAs middle cell were grown by Metal-Organic Chemical Vapor Deposition (MOCVD). Devices with different numbers of QD layers are compared to baseline device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3332f035951bebe267c36bbe03a68f7c
https://doi.org/10.1109/pvsc.2013.6744119
https://doi.org/10.1109/pvsc.2013.6744119
Publikováno v:
SPIE Proceedings.
The incorporation of nanostructures, such as quantum dots (QD), into the intrinsic region of III-V solar cells has been proposed as a potential route towards boosting conversion efficiencies with immediate applications in concentrator photovoltaic an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc4fe798a5c2deafeef17ed0168ba925
https://doi.org/10.1117/12.2005457
https://doi.org/10.1117/12.2005457
Autor:
Seth M. Hubbard, Kristina Driscoll
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
Concentrator Photovoltaics (CPV) have emerged as a potential alternative energy source due to a favorable balance between cost and efficiency. In contrast to traditional flat panel systems, CPVs result in cheaper fabrication costs since a bulk of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d820439a659490f5c7f98f51bc7df8d8
https://doi.org/10.1109/pvsc.2012.6318211
https://doi.org/10.1109/pvsc.2012.6318211