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pro vyhledávání: '"Kristin Schupke"'
Autor:
Audrey Beckert, Werner Graf, Kristin Schupke, Clemens Fitz, Sven Schmidbauer, Ines Thuemmel, Momtchil Stavrev
Publikováno v:
Microelectronic Engineering. 85:2025-2027
Conventional DRAM contact to Si cleaning methods are using wet HF-based chemistry to remove the native SiO"2 from the contact bottom and reduce the contact resistance [M.R. Baklanov, et al., J. Electrochem. Soc. 145 (9) (1998) 3240-3246]. With furthe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df778857bd8a5b6feb68f5339878c5e3
https://doi.org/10.1016/j.mee.2008.07.011
https://doi.org/10.1016/j.mee.2008.07.011
