Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Kristen L, Genter"'
Autor:
Kristen L. Genter, Matt D. Brubaker, Samuel Berweger, Jonas C. Gertsch, Kris A. Bertness, Pavel Kabos, Victor M. Bright
Publikováno v:
Journal of Microelectromechanical Systems. 31:483-485
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26b509cdd2dbdf76cf18aa543d234e20
https://doi.org/10.1109/jmems.2022.3172645
https://doi.org/10.1109/jmems.2022.3172645
Autor:
T. Mitch Wallis, Peide D. Ye, Samuel Berweger, Wenzhuo Wu, Yixiu Wang, Benjamin Pollard, Gang Qiu, Kristen L. Genter, Pavel Kabos, Robert Tyrrell-Ead
Publikováno v:
Nano Letters. 19:1289-1294
Developing van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as methods to image and study spatial variations in carrier type and assoc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ef7e750f59a3313dd5eff2fdc1d8961
https://doi.org/10.1021/acs.nanolett.8b04865
https://doi.org/10.1021/acs.nanolett.8b04865
Publikováno v:
2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers).
This paper illustrates an electrostatic comb-drive actuator array integrated with a scanning probe cantilever capable of $9.13\mu \mathrm{m}$ of unilateral displacement at as little as 55V. We have investigated and implemented several approaches to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d62113111989133e88a60f199a540540
https://doi.org/10.1109/transducers50396.2021.9495474
https://doi.org/10.1109/transducers50396.2021.9495474
Autor:
Matt D, Brubaker, Kristen L, Genter, Joel C, Weber, Bryan T, Spann, Alexana, Roshko, Paul T, Blanchard, Todd E, Harvey, Kris A, Bertness
Publikováno v:
Proc SPIE Int Soc Opt Eng
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N-polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio n-type NW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::49f663e9da3fbd143948e55e8e0dcc99
https://pubmed.ncbi.nlm.nih.gov/33343056
https://pubmed.ncbi.nlm.nih.gov/33343056
Autor:
Joel C. Weber, Kris A. Bertness, Todd E. Harvey, Matthew D. Brubaker, Alexana Roshko, Paul T. Blanchard, Kristen L. Genter, Bryan T. Spann
Publikováno v:
Low-Dimensional Materials and Devices 2018.
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N-polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio n-type NW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d8aaf25561342c85b78a95cc069c026
https://doi.org/10.1117/12.2322832
https://doi.org/10.1117/12.2322832
Autor:
Todd E. Harvey, Matthew D. Brubaker, Kris A. Bertness, Bryan T. Spann, Alexana Roshko, Paul T. Blanchard, Kristen L. Genter
Publikováno v:
Nanotechnology
Ultraviolet light-emitting diodes (UV LEDs) fabricated from N-polar AlGaN/GaN core-shell nanowires with p-i-n structure produced electroluminescence at 365 nm with ~5x higher intensities than similar GaN homojunction LEDs. The improved characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d192fd5d6217396737d7bb0d4b6ba36b
https://doi.org/10.1088/1361-6528/ab07ed
https://doi.org/10.1088/1361-6528/ab07ed
Autor:
Matt D Brubaker, Kristen L Genter, Alexana Roshko, Paul T Blanchard, Bryan T Spann, Todd E Harvey, Kris A Bertness
Publikováno v:
Nanotechnology; 6/7/2019, Vol. 30 Issue 23, p1-1, 1p