Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Kristen L, Genter"'
Autor:
Kristen L. Genter, Matt D. Brubaker, Samuel Berweger, Jonas C. Gertsch, Kris A. Bertness, Pavel Kabos, Victor M. Bright
Publikováno v:
Journal of Microelectromechanical Systems. 31:483-485
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26b509cdd2dbdf76cf18aa543d234e20
https://doi.org/10.1109/jmems.2022.3172645
https://doi.org/10.1109/jmems.2022.3172645
Publikováno v:
2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers).
This paper illustrates an electrostatic comb-drive actuator array integrated with a scanning probe cantilever capable of $9.13\mu \mathrm{m}$ of unilateral displacement at as little as 55V. We have investigated and implemented several approaches to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d62113111989133e88a60f199a540540
https://doi.org/10.1109/transducers50396.2021.9495474
https://doi.org/10.1109/transducers50396.2021.9495474
Autor:
Matt D, Brubaker, Kristen L, Genter, Joel C, Weber, Bryan T, Spann, Alexana, Roshko, Paul T, Blanchard, Todd E, Harvey, Kris A, Bertness
Publikováno v:
Proc SPIE Int Soc Opt Eng
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N-polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio n-type NW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::49f663e9da3fbd143948e55e8e0dcc99
https://pubmed.ncbi.nlm.nih.gov/33343056
https://pubmed.ncbi.nlm.nih.gov/33343056
Autor:
Joel C. Weber, Kris A. Bertness, Todd E. Harvey, Matthew D. Brubaker, Alexana Roshko, Paul T. Blanchard, Kristen L. Genter, Bryan T. Spann
Publikováno v:
Low-Dimensional Materials and Devices 2018.
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N-polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio n-type NW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d8aaf25561342c85b78a95cc069c026
https://doi.org/10.1117/12.2322832
https://doi.org/10.1117/12.2322832
Autor:
Todd E. Harvey, Matthew D. Brubaker, Kris A. Bertness, Bryan T. Spann, Alexana Roshko, Paul T. Blanchard, Kristen L. Genter
Publikováno v:
Nanotechnology
Ultraviolet light-emitting diodes (UV LEDs) fabricated from N-polar AlGaN/GaN core-shell nanowires with p-i-n structure produced electroluminescence at 365 nm with ~5x higher intensities than similar GaN homojunction LEDs. The improved characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d192fd5d6217396737d7bb0d4b6ba36b
https://doi.org/10.1088/1361-6528/ab07ed
https://doi.org/10.1088/1361-6528/ab07ed
Autor:
Matt D Brubaker, Kristen L Genter, Alexana Roshko, Paul T Blanchard, Bryan T Spann, Todd E Harvey, Kris A Bertness
Publikováno v:
Nanotechnology; 6/7/2019, Vol. 30 Issue 23, p1-1, 1p