Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Kristell Courouble"'
Autor:
Valentin Aubriet, Kristell Courouble, Olivier Bardagot, Renaud Demadrille, Łukasz Borowik, Benjamin Grévin
Publikováno v:
Nanotechnology. 33(22)
In this work, we use pump-probe Kelvin Probe Force Microscopy (pp-KPFM) to investigate light-induced surface potential dynamics in alumina-passivated crystalline silicon, and in an organic bulk heterojunction thin film based on the PTB7-PC71BM tandem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::776998c3387ed618d308364018887908
https://pubmed.ncbi.nlm.nih.gov/35168229
https://pubmed.ncbi.nlm.nih.gov/35168229
Publikováno v:
Review of Scientific Instruments. 92:083905
We report a correlative analysis between corona oxide characterization of semiconductor (COCOS) and Kelvin probe force microscopy (KPFM) for the study of embedded silicon-oxide interfaces in the field of chemical and field-effect passivation. Analyze
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c1144a0a00ce86496972c82c9746d1b
https://doi.org/10.1063/5.0052885
https://doi.org/10.1063/5.0052885
Autor:
Akihisa Iwasaki, S. Zoll, A. Lamaury, Kristell Courouble, D. Krejcirova, Lucile Broussous, David Fuard, H. Ishikawa, Fabrice Buisine
Publikováno v:
Solid State Phenomena. 219:209-212
Titanium Nitride metal hard mask was first introduced for BEOL patterning at 65 nm [1] and 45 nm nodes [2]. Indeed, in this “Trench First Hard Mask” (TFHM) backend architecture, the dual hard mask stack (SiO2 & TiN) allows a minimized exposure of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b042bf2c70dc75f8a8e6295735f79e7b
https://doi.org/10.4028/www.scientific.net/ssp.219.209
https://doi.org/10.4028/www.scientific.net/ssp.219.209
Publikováno v:
Solid State Phenomena. 187:211-214
For the 32nm logic technology and beyond, more stringent specifications in terms of dimensions and materials integrity continue to drive the cleaning process improvements. In this paper, post-etch wet cleaning was optimized in order to address CD los
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45cb7a59ddea3f1c56b4ef44527f0041
https://doi.org/10.4028/www.scientific.net/ssp.187.211
https://doi.org/10.4028/www.scientific.net/ssp.187.211
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
In this paper, wet cleaning solution compatible with cobalt are investigated to achieve low Co etching rate on blankets film and no film attack on patterned 14nm wafer after line and via etching. Proposed solutions are compared to conventional wet cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa8f803a9e564388993a72e41bf8c31
https://doi.org/10.1109/iitc-mam.2015.7325635
https://doi.org/10.1109/iitc-mam.2015.7325635
Autor:
François Bertin, Vincent Rouessac, Kristell Courouble, Matthieu Lépinay, H. Marinov, Christophe Licitra, André Ayral, Lucile Broussous, N. Djourelov
Publikováno v:
Journal of Porous Materials
Journal of Porous Materials, Springer Verlag, 2014, 21 (4), pp.475-484. ⟨10.1007/s10934-014-9794-7⟩
Journal of Porous Materials, 2014, 21 (4), pp.475-484. ⟨10.1007/s10934-014-9794-7⟩
Journal of Porous Materials, Springer Verlag, 2014, 21 (4), pp.475-484. ⟨10.1007/s10934-014-9794-7⟩
Journal of Porous Materials, 2014, 21 (4), pp.475-484. ⟨10.1007/s10934-014-9794-7⟩
International audience; The impact of plasma etching and chemical wet cleaning on solvent diffusion in porous network of a SiOCH low-k dielectric material is studied. Characterization of porosity and pore size distribution by means of ellipso-porosim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::279e0d9312a331b3335c02c6a26df387
https://hal.umontpellier.fr/hal-01688599
https://hal.umontpellier.fr/hal-01688599
