Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Kristan Bryan, Simbulan"'
Autor:
Shi-Xian Guan, Tilo H. Yang, Chih-Hao Yang, Chuan-Jie Hong, Bor-Wei Liang, Kristan Bryan Simbulan, Jyun-Hong Chen, Chun-Jung Su, Kai-Shin Li, Yuan-Liang Zhong, Lain-Jong Li, Yann-Wen Lan
Publikováno v:
npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-8 (2023)
Abstract The performance enhancement of integrated circuits relying on dimension scaling (i.e., following Moore’s Law) is more and more challenging owing to the physical limit of Si materials. Monolithic three-dimensional (M3D) integration has been
Externí odkaz:
https://doaj.org/article/21909ef3fb1d41169b9cade8d1307404
Autor:
Bor-Wei Liang, Min-Fang Li, Hung-Yu Lin, Kai-Shin Li, Jyun-Hong Chen, Jia-Min Shieh, Chien-Ting Wu, Kristan Bryan Simbulan, Ching-Yuan Su, Chieh-Hsiung Kuan, Yann-Wen Lan
Publikováno v:
Nanoscale. 15:2586-2594
A graphene-base hot electron transistor integrated with a 2D material heterojunction is demonstrated as a frequency modulator. Our device can operate as a doubler or tripler with AC signals from 100 kHz to 10 MHz in single tunneling transistor.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cde2a44b6dfc6a91a7b41ae0d775212
https://doi.org/10.1039/d2nr06285b
https://doi.org/10.1039/d2nr06285b
Autor:
Wen-Hao, Chang, Chun-I, Lu, Tilo H, Yang, Shu-Ting, Yang, Kristan Bryan, Simbulan, Chih-Pin, Lin, Shang-Hsien, Hsieh, Jyun-Hong, Chen, Kai-Shin, Li, Chia-Hao, Chen, Tuo-Hung, Hou, Ting-Hua, Lu, Yann-Wen, Lan
Publikováno v:
Nanoscale horizons. 7(12)
The negative differential resistance (NDR) effect has been widely investigated for the development of various electronic devices. Apart from traditional semiconductor-based devices, two-dimensional (2D) transition metal dichalcogenide (TMD)-based fie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e24c049652ba5d36739af61fdbdf2c8f
https://pubmed.ncbi.nlm.nih.gov/36285561
https://pubmed.ncbi.nlm.nih.gov/36285561
Publikováno v:
ACS Nano. 15:14822-14829
Twisted light carries a defined orbital angular momentum (OAM) that can enhance forbidden transitions in atoms and even semiconductors. Such attributes can possibly lead to enhancements of the material's photogenerated carriers through improved absor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a300f7d00221638addafcdc2844cad93
https://doi.org/10.1021/acsnano.1c04902
https://doi.org/10.1021/acsnano.1c04902
Autor:
Yi-Jie Feng, Kristan Bryan Simbulan, Tilo H. Yang, Ye-Ru Chen, Kai-Shin Li, Chia-Jung Chu, Ting-Hua Lu, Yann-Wen Lan
Publikováno v:
ACS nano. 16(6)
Light can possess orbital angular momentum (OAM), in addition to spin angular momentum (SAM), which offers nearly infinite possible values of momentum states, allowing a wider degree of freedom for information processing and communications. The OAM o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72cac595d2579098691b6b176493aeb1
https://pubmed.ncbi.nlm.nih.gov/35713188
https://pubmed.ncbi.nlm.nih.gov/35713188
Publikováno v:
Carbon. 176:440-445
Paper electronics have been fast developed in recent years due to their degradability and recyclability; however, most of them are barely equipped with logic functions, impeding them from becoming autonomous on-paper systems. To provide a working uni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9da034463ae599841d3b9f0ec9444deb
https://doi.org/10.1016/j.carbon.2021.01.156
https://doi.org/10.1016/j.carbon.2021.01.156
Autor:
Kristan Bryan Simbulan, Chun-I Lu, Feng Li, Yann Wen Lan, Guan-Hao Peng, T. H. Lu, Junjie Qi, Oscar Javier Gomez Sanchez, Jhen Dong Lin, Shun-Jen Cheng, Chan Shan Yang, Teng De Huang
Publikováno v:
ACS Nano. 15:3481-3489
Twisted light carries a well-defined orbital angular momentum (OAM) of lℏ per photon. The quantum number l of its OAM can be arbitrarily set, making it an excellent light source to realize high-dimensional quantum entanglement and ultrawide bandwid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceec5c4d56a99a63d479c31eacb82e7a
https://doi.org/10.1021/acsnano.0c10823
https://doi.org/10.1021/acsnano.0c10823
Autor:
Kristan Bryan Simbulan, Chun-I Lu, Wen Chin Lin, Chak Ming Liu, Xiao Wang, Yann Wan Lan, Guoqiang Yu, Shang An Wang, T. H. Lu
Publikováno v:
Nanoscale Horizons. 6:462-467
All-optical switching of magnetic materials is a potential method for realizing high-efficiency and high-speed data writing in spintronics devices. The current method, which utilizes two circular helicities of light to manipulate magnetic domains, is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bca68961a3833590d5f9017f51d30e7c
https://doi.org/10.1039/d1nh00063b
https://doi.org/10.1039/d1nh00063b
Autor:
Rahul Kesarwani, Kristan Bryan Simbulan, Teng-De Huang, Yu-Fan Chiang, Nai-Chang Yeh, Yann-Wen Lan, Ting-Hua Lu
Publikováno v:
Science Advances. 8
Controlling the density of exciton and trion quasiparticles in monolayer two-dimensional (2D) materials at room temperature by nondestructive techniques is highly desired for the development of future optoelectronic devices. Here, the effects of diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b738da64d2b2ddb31fb81f9af044ae25
https://doi.org/10.1126/sciadv.abm0100
https://doi.org/10.1126/sciadv.abm0100
Autor:
Che Yu Lin, Kai Shin Li, Chuan Jie Hong, Yann Wen Lan, Kristan Bryan Simbulan, Yuan Liang Zhong, Yan-Kuin Su
Publikováno v:
Nanoscale Horizons. 5:163-170
In this work, we introduce a MoS2-based field effect transistor that can alternately operate either as a p-type or an n-type semiconductor in the same device. The proposed device is built with an adjustable threshold voltage (Vth), which can be varie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fd579fe429e4db5bdf6c8c52a3daf6f
https://doi.org/10.1039/c9nh00275h
https://doi.org/10.1039/c9nh00275h