Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Kristína Hušeková"'
Autor:
Edmund Dobročka, Filip Gucmann, Kristína Hušeková, Peter Nádaždy, Fedor Hrubišák, Fridrich Egyenes, Alica Rosová, Miroslav Mikolášek, Milan Ťapajna
Publikováno v:
Materials, Vol 16, Iss 1, p 20 (2022)
We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal–organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roug
Externí odkaz:
https://doaj.org/article/e5f936cc37314fd888339a03ebf4802b
Autor:
Ťapajna, Edmund Dobročka, Filip Gucmann, Kristína Hušeková, Peter Nádaždy, Fedor Hrubišák, Fridrich Egyenes, Alica Rosová, Miroslav Mikolášek, Milan
Publikováno v:
Materials; Volume 16; Issue 1; Pages: 20
We report on crystal structure and thermal stability of epitaxial ε/κ-Ga2O3 thin films grown by liquid-injection metal–organic chemical vapor deposition (LI-MOCVD). Si-doped Ga2O3 films with a thickness of 120 nm and root mean square surface roug
Autor:
Kristína Hušeková, Prangya Parimita Sahoo, Matej Mičušík, Karol Fröhlich, Martin Kemény, Ján Šoltýs, Ladislav Harmatha, Miroslav Mikolášek, Edmund Dobročka, Peter Ondrejka
Publikováno v:
ACS Applied Energy Materials. 4:11162-11172
Autor:
Ladislav Harmatha, Peter Ondrejka, Filip Chymo, Karol Fröhlich, Martin Kemény, Kristína Hušeková, Ivan Hotovy, Miroslav Mikolášek
Publikováno v:
Journal of Electrical Engineering. 72:203-207
This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO2 layer and TiO2 protection layer for photoelectrochemical water splitting. It is shown that utiliz
Autor:
Filip Gucmann, Peter Nádaždy, Kristína Hušeková, Edmund Dobročka, Juraj Priesol, Fridrich Egyenes, Alexander Šatka, Alica Rosová, Milan Ťapajna
Publikováno v:
Materials Science in Semiconductor Processing. 156:107289
Autor:
Magdaléna Kadlečíková, Ľubomír Vančo, Juraj Breza, Miroslav Mikolášek, Kristína Hušeková, Karol Fröhlich, Paul Procel, Miro Zeman, Olindo Isabella
Publikováno v:
Optik. 257
We compared the morphology and Raman response of nanoscale shaped surfaces of Si substrates versus monocrystalline Si. Samples were structured by reactive ion etching, and four of them were covered by a RuO2-IrO2 layer. Raman bands, centred at approx
Autor:
Karol Załęski, Dagmar Gregušová, Valerii Myndrul, Emerson Coy, Kristína Hušeková, Valentyn Smyntyna, Ievgen Brytavskyi, Mykola Pavlenko, Luis Yate, Igor Iatsunskyi
Publikováno v:
Applied Surface Science. 471:686-693
Ruthenium oxide (RuO2) has received significant attention in recent years for its photocatalytic properties and photoelectrochemical (PEC) performance. In the present research, RuO2 nanolayers were grown on n-type porous silicon (PSi) by metal organi
Autor:
Juraj Racko, Filip Chymo, M. Tapajna, Vlastimil Rehacek, Karol Fröhlich, Miroslav Mikolášek, Kristína Hušeková, Ladislav Harmatha
Publikováno v:
Applied Surface Science. 461:48-53
This paper presents an electrical and photoelectrochemical comparison of MIS photoanodes with a metal organic chemical vapor deposited RuO2 layer and evaporated Ni layer to provide a deeper insight into the interface properties of such structures. Th
Autor:
Ivan Kundrata, Filip Chymo, Miroslav Mikolášek, Karol Fröhlich, Kristína Hušeková, Juraj Racko, Juraj Breza, Ladislav Harmatha
Publikováno v:
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019).
The results of capacitive and current voltage measurements on metal-insulator-semiconductor (MIS) photoanode structures with n-type silicon substrate are presented in this paper. The best photo-voltage and photo-current results were obtained on MIS s