Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Krishnasamy, Rajendran"'
Publikováno v:
International Journal of Electronics. 87:513-530
Comparative analysis of the minimum surface potential (Φ m) and the respective position (or location of barrier peaks (y 0)) in various Si MOSFET devices including bulk Si MOSFETs, silicon-on-insulator (SOI) MOSFETs and double-gate SOI MOSFETs has b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85801a1465345be86f39ee6ceb0bb0bd
https://doi.org/10.1080/002072100131959
https://doi.org/10.1080/002072100131959
Autor:
Khater, Marwan H., Adam, Thomas N., Krishnasamy, Rajendran, Dahlstrom, Mattias E., Jae-Sung Rich, Schonenberg, Kathryn T., Orner, Bradly A., Pagette, Francois, Stein, Kenneth, Ahlgren, David C.
Publikováno v:
Advanced Semiconductor Devices - Proceedings of the 2006 Lester Eastman Conference; 2007, p61-80, 20p