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pro vyhledávání: '"Krishnan, N. Harihara"'
Autor:
Krishnan, N. Harihara, Vikram, Kumar Yadav, Anandarao, N., Jayaraman, K.N., Govindaraj, S., Sanjeev, Ganesh, Mittal, K.C.
This paper reports control of switching characteristics of silicon-based semiconductor diode using electron beam produced using linear accelerator. Conventionally, p-n junction chips of diode are exposed to gamma rays from a radioactive source or ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2001::08de657962df82c29b48a79c2a93cf3b
http://essuir.sumdu.edu.ua/handle/123456789/30998
http://essuir.sumdu.edu.ua/handle/123456789/30998
