Zobrazeno 1 - 10
of 156
pro vyhledávání: '"Krishnan, Baskar"'
Autor:
Sankaranarayanan, Sanjay, Kandasamy, Prabakaran, Raju, Ramesh, Gengan, Saravanan, Krishnan, Baskar
Publikováno v:
In Sensors and Actuators: A. Physical 1 December 2021 332 Part 2
Autor:
Sankaranarayanan, Sanjay, Kandasamy, Prabakaran, Raju, Ramesh, Gengan, Saravanan, Krishnan, Baskar
Publikováno v:
In Scripta Materialia 15 March 2021 194
Autor:
Ravi, Loganathan, Krishnan, Baskar
Publikováno v:
In Superlattices and Microstructures November 2018 123:144-153
Publikováno v:
In Applied Surface Science 15 August 2018 449:213-220
Publikováno v:
In Neurotoxicology December 2016 57:270-281
Publikováno v:
International Journal of Hydrogen Energy. 45:8198-8222
Currently several type of energy sources exist in the modern world. The energy makes people's life more comfortable, easy, time savings, fast transformation of information and various modes of transmission. Because of large demand of energy, efforts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::123f47171e12aaadde2bc2c92ae41649
https://doi.org/10.1016/j.ijhydene.2020.01.048
https://doi.org/10.1016/j.ijhydene.2020.01.048
Autor:
Subburaj Surender, Kandasamy Prabakaran, Siddham Pradeep, Inbaraj Davis Jacob, Yong Feng Lu, Subramanian Balakumar, Krishnan Baskar
Publikováno v:
Optical Materials. 136:113462
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9c2a5a51f88d30e30027f2f512d36f8
https://doi.org/10.1016/j.optmat.2023.113462
https://doi.org/10.1016/j.optmat.2023.113462
Autor:
Krishnan Baskar, Bhavana Gupta, Sumithra Sivadas Menon, Gopal Bhalerao, Shubra Singh, Bernaurdshaw Neppolian, Sajjad Hussain, Hafeez Yusuf Hafeez
Publikováno v:
Renewable Energy. 141:760-769
A novel UV–visible light active oxynitride photocatalyst, ZnO:InN, has been demostrated to exhibit efficient hydrogen evolution from water as compared to some conventional photocatalysts. A reduction in bandgap (2.82 eV), as estimated from diffuse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27c76f3ec899f034e71f627365dcafc1
https://doi.org/10.1016/j.renene.2019.03.131
https://doi.org/10.1016/j.renene.2019.03.131
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-12 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-12 (2020)
Gallium nitride (GaN) was epitaxially grown on nitrogen doped single layer graphene (N-SLG) substrates using chemical vapour deposition (CVD) technique. The results obtained using x-ray diffractometer (XRD) revealed the hexagonal crystal structure of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid_dedup__::725849b1b98968e92f2e967186b1a229
http://europepmc.org/articles/PMC7468238
http://europepmc.org/articles/PMC7468238