Zobrazeno 1 - 10
of 308
pro vyhledávání: '"Krishna Shenai"'
Autor:
Krishna Shenai
Publikováno v:
Proceedings of the IEEE. 107:2308-2326
Power electronics switching devices made on wide-bandgap (WBG) semiconductors are known to have the potential to make a transformative impact on 21st century energy economy. However, their market penetration has been slow primarily due to high cost a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cd0245bfebeb26c83304bfa90bf0ca8
https://doi.org/10.1109/jproc.2019.2948554
https://doi.org/10.1109/jproc.2019.2948554
Autor:
Krishna Shenai
Publikováno v:
IEEE Transactions on Electron Devices. 65:4216-4224
The figure of merit (FOM) of a semiconductor device represents an important quality as it pertains to its performance limits and is often used to drive the technology development in a specific direction. Comparing the performances of switching power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e04cb7fc814e6da9df56bc9ba0c9ed10
https://doi.org/10.1109/ted.2018.2866360
https://doi.org/10.1109/ted.2018.2866360
Autor:
Krishna Shenai
Publikováno v:
Auto Tech Review. 5:42-47
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05aea19572de119f9d90bb6ae13ac8a1
https://doi.org/10.1365/s40112-016-1257-x
https://doi.org/10.1365/s40112-016-1257-x
Publikováno v:
IEEE Power Electronics Magazine. 3:42-48
According to a recent report by the International Energy Agency [1], although India is the second most populous country on earth, it ranks far behind other countries in terms of per capita electricity consumption and carbon footprint. As shown in Tab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9c5d58ce4fa7374a5e88b85e3469411
https://doi.org/10.1109/mpel.2016.2614905
https://doi.org/10.1109/mpel.2016.2614905
Publikováno v:
IEEE Power Electronics Magazine. 4:91-93
Presents information on the IEEE International Conference on Sustainable Green Buildings and Communities Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c50ea681fcc665c2b4cba823e376cc9
https://doi.org/10.1109/mpel.2017.2692919
https://doi.org/10.1109/mpel.2017.2692919
Autor:
Krishna Shenai
Publikováno v:
IEEE Power Electronics Magazine. 2:12-16
Much of the credit for 20th-century advances in computing and communication goes to the silicon transistor and the integrated circuit. The same may be said for the silicon insulated gate bipolar transistor (IGBT) with respect to the impending revolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4110db310aa863a5919d65411ba69765
https://doi.org/10.1109/mpel.2015.2421751
https://doi.org/10.1109/mpel.2015.2421751
Autor:
Abhiroop Chattopadhyay, Krishna Shenai
Publikováno v:
IEEE Transactions on Electron Devices. 62:359-365
High-voltage (≥100 V) power diodes fabricated on wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride are generally rated for punch-through leakage current and employ a buffer layer sandwiched between the drift region and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bfc3e1e200f54df45f937303ee81aca
https://doi.org/10.1109/ted.2014.2371775
https://doi.org/10.1109/ted.2014.2371775
Publikováno v:
IEEE Transactions on Electron Devices. 62:286-293
The modular multilevel converter (MMC) is the most promising converter topology for medium- and high-power applications. One of the main concerns in the operation of the MMC, particularly for high-power applications, is its efficiency, which should b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dbc1ae44114f8e997e2949ae4d92f9d
https://doi.org/10.1109/ted.2014.2375875
https://doi.org/10.1109/ted.2014.2375875
Publikováno v:
IEEE Transactions on Electron Devices. 62:449-457
Simple and accurate circuit simulation models for high-voltage silicon carbide power MOSFETs and Schottky barrier diodes are presented and validated. The models are physics-based and consist of minimal number of model parameters that can be easily ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::717e3377a44f84282db31fb9f1c8a5d0
https://doi.org/10.1109/ted.2014.2384277
https://doi.org/10.1109/ted.2014.2384277
Autor:
Krishna Shenai
Publikováno v:
IEEE Power Electronics Magazine. 1:27-32
To enable the rapidly emerging and imminent energy economy, high-voltage (HV) and high-current robust power electronic modules (PEMs) are needed at low cost. PEMs typically consist of a number of semiconductor power switches and driver chips; intelli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ea69d5f1de52f49c12b8411d14541e6
https://doi.org/10.1109/mpel.2014.2330459
https://doi.org/10.1109/mpel.2014.2330459