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pro vyhledávání: '"Krishna Murthy, Hithiksha"'
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 361 Issue: 1 p105-110, 6p
Autor:
Yuan, Zimo, Lim, Jang Kwon, Metreveli, Alex, Krishna Murthy, Hithiksha, Bakowski, Mietek, Hallén, Anders
Publikováno v:
Diffusion and Defect Data Part B: Solid State Phenomena; August 2024, Vol. 361 Issue: 1 p77-83, 7p
Autor:
Krishna Murthy, Hithiksha
GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-321947
