Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Krishna C. Kundeti"'
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125311-125311-8 (2017)
Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes. Post deposition annealing at 500 oC for up to 60 hours in
Externí odkaz:
https://doaj.org/article/a398e4dca8bf4f599de07f312be0a8bb
