Zobrazeno 1 - 10
of 109
pro vyhledávání: '"Kris Vanstreels"'
Autor:
Houman Zahedmanesh, Kris Vanstreels
Publikováno v:
Micro and Nano Engineering, Vol 2, Iss , Pp 35-40 (2019)
In this study the impacts of two main design parameters, namely the metal and via densities on the mechanical integrity of nano-interconnects were investigated. To this aim, analytical modelling was used in order to derive the effective mechanical pr
Externí odkaz:
https://doaj.org/article/8a4262c0987b43a998e62345ded82c78
Autor:
Yun-Hsuan Chen, Maaike Op de Beeck, Luc Vanderheyden, Evelien Carrette, Vojkan Mihajlović, Kris Vanstreels, Bernard Grundlehner, Stefanie Gadeyne, Paul Boon, Chris Van Hoof
Publikováno v:
Sensors, Vol 14, Iss 12, Pp 23758-23780 (2014)
Conventional gel electrodes are widely used for biopotential measurements, despite important drawbacks such as skin irritation, long set-up time and uncomfortable removal. Recently introduced dry electrodes with rigid metal pins overcome most of thes
Externí odkaz:
https://doaj.org/article/f746952a064b4531bada231fce9f3436
Autor:
Giovanni Capuz, Melina Lofrano, Carine Gerets, Fabrice Duval, Pieter Bex, Jaber Derakhshandeh, Kris Vanstreels, Alain Phommahaxay, Eric Beyne, Andy Miller
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 18:12-20
For die-to-wafer (D2W) stacking of high-density interconnects and fine-pitch microbumps, underfill serves to fill the spaces in-between microbumps for protection and reliability. Among the different types of underfill, nonconductive film (NCF) has th
Autor:
Serena Iacovo, Fuya Nagano, Venkat Sunil Kumar Channam, Edward Walsby, Kath Crook, Keith Buchanan, Anne Jourdain, Kris Vanstreels, Alain Phommahaxay, Eric Beyne
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Autor:
Andy Miller, Jaber Derakhshandeh, Melina Lofrano, Pieter Bex, Carine Gerets, Eric Beyne, Kris Vanstreels, Alain Phommahaxay, Fabrice Duval, Giovanni Capuz
Publikováno v:
International Symposium on Microelectronics. 2020:000185-000191
For die to wafer bonding of high-density interconnects and fine pitch microbumps developing and characterizing suitable underfill materials are required. In general, underfill serve to fill the spaces in-between microbumps for protection and reliabil
Autor:
Valeria Founta, Jean-Philippe Soulié, Kiroubanand Sankaran, Kris Vanstreels, Karl Opsomer, Pierre Morin, Pieter Lagrain, Alexis Franquet, Danielle Vanhaeren, Thierry Conard, Johan Meersschaut, Christophe Detavernier, Joris Van de Vondel, Ingrid De Wolf, Geoffrey Pourtois, Zsolt Tőkei, Johan Swerts, Christoph Adelmann
Publikováno v:
SSRN Electronic Journal.
Autor:
Wei Guo, Wouter Monnens, Wei Zhang, Sijie Xie, Ning Han, Zhenyu Zhou, Nicolas Chanut, Kris Vanstreels, Rob Ameloot, Xuan Zhang, Jan Fransaer
Publikováno v:
Microporous and Mesoporous Materials. 350:112443
Publikováno v:
Thin Solid Films. 759:139467
Autor:
Nancy Heylen, K. Croes, Rogier Baert, S. Park, Geoffrey Pourtois, Jean-Philippe Soulie, Katia Devriendt, Christopher J. Wilson, Ming Mao, Q-T. Le, V. Blanco, Gayle Murdoch, Herbert Struyf, Anshul Gupta, V. Vega, Lieve Teugels, S. Paolillo, N. Jourdan, Kiroubanand Sankaran, J. Sweerts, Ivan Ciofi, S. Decoster, P. Morin, Els Kesters, Juergen Boemmels, Frederic Lazzarino, Zs. Tokei, Christoph Adelmann, M. H. van der Veen, M. Ercken, Kris Vanstreels, S. Van Elshocht, M. O'Toole, J. Versluijs, M. H. Na, Frank Holsteyns, Houman Zahedmanesh
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Interconnect options will be introduced and reviewed targeting tight pitch metal layers at the local levels. Examples include hybrid metallization, semi-damascene interconnects as well as potential new conductor materials.
Autor:
S. Paolillo, Christopher J. Wilson, Gayle Murdoch, Zsolt Tokei, Kris Vanstreels, Olalla Varela Pedreira
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
In this paper we present a semidamascene integration approach for interconnect devices as an alternative to dual damascene. A Ru layer is deposited to fill vias and provide an overburden in which we will form lines using subtractive metal etching, en