Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Kris Van Nieuwenhuysen"'
Autor:
Twan Bearda, Ivan Gordon, Valerie Depauw, Jinyoun Cho, Kris Van Nieuwenhuysen, Julius Röth, Jozef Szlufcik, Hariharsudan Sivaramakrishnan Radhakrishnan, Jef Poortmans
Utilisation of expensive silicon (Si) material in crystalline Si modules has come down to 4 g Si per watt-peak in 2018, mainly as a result of reduction in wafer thickness and kerf losses as well as increase in module efficiencies. With continued prog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d00a8762b061a5045c796578aded7402
https://lirias.kuleuven.be/handle/123456789/658944
https://lirias.kuleuven.be/handle/123456789/658944
Autor:
Hariharsudan Sivaramakrishnan Radhakrishnan, Jozef Szlufcik, Valerie Depauw, Miha Filipič, Jef Poortmans, Kris Van Nieuwenhuysen, Maria Recaman Payo, Ivan Gordon, Twan Bearda, Izabela Kuzma Filipek, Maarten Debucquoy, Filip Duerinckx
Publikováno v:
Energy Procedia
One of the advantages of an epitaxially grown emitter is that its doping profile is not limited by the diffusion process and that almost any arbitrary profile shape can be realized. In this simulation study we make use of the epitaxial doping profile
Autor:
Yaser Abdulraheem, Menglei Xu, Shuja Malik, Mahmudul Hasan, Valerie Depauw, Shashi Kiran Jonnak, Miha Filipič, Hariharsudan Sivaramakrishnan Radhakrishnan, Ivan Gordon, Jef Poortmans, Twan Bearda, Jozef Szlufcik, Kris Van Nieuwenhuysen, Maarten Debucquoy
Publikováno v:
Solar Energy Materials and Solar Cells
Previously, IMEC proposed the i(2)-module concept which allows to process silicon heterojunction interdigitated back-contact (SHJ-IBC) cells on thin ( < 50 mu m) Si wafers at module level. This concept includes the bonding of the thin wafer early on
Autor:
Jef Poortmans, Xingyu Liu, Maarten Debucquoy, Ivan Gordon, Hariharsudan Sivaramakrishnan Radhakrishnan, Loic Tous, Yaser Abdulraheem, Menglei Xu, Kris Van Nieuwenhuysen, Twan Bearda, Miha Filipič, Shashi Kiran Jonnak, Alireza Hajijafarassar, Valerie Depauw, Jozef Szlufcik
Publikováno v:
MRS Advances. 1:3235-3246
In order to reduce the material cost for silicon solar cells, several research groups are investigating methods to minimize the silicon consumption for making monocrystalline silicon wafers. One promising approach is deposition of an epitaxial layer
Autor:
Hariharsudan Sivaramakrishnan Radhakrishnan, Gius Uddin, Maarten Debucquoy, Yury Smirnov, Yaser Abdulraheem, Miha Filipič, Shruti Jambaldinni, Jef Poortmans, Twan Bearda, Ivan Gordon, Arsalan Razzaq, Ivan Vasil'evskii, Jinyoun Cho, Menglei Xu, Kris Van Nieuwenhuysen
One of the promising ways to increase the efficiency of silicon heterojunction (SHJ) cells is to replace the doped hydrogenated amorphous silicon (a-Si:H) contact layer by doped hydrogenated microcrystalline silicon (mu c-Si:H) which has better suite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c3a7263fe87755e08c48b7218909f67
http://hdl.handle.net/1942/28897
http://hdl.handle.net/1942/28897
Autor:
Kris Van Nieuwenhuysen, Hariharsudan Sivaramakrishnan Radhakrishnan, Ivan Gordon, Jef Poortmans, Twan Bearda, Jozef Szlufcik, Valerie Depauw, Roberto Martini
Publikováno v:
Solar Energy Materials and Solar Cells. 135:113-123
Two important aspects for the success of the porous silicon-based layer transfer method in producing kerfless thin ( 15 cm −3 which corresponds to a minimum minority carrier diffusion length of ~670 µm (> 16 times the silicon thickness). With such
Autor:
Maarten Debucquoy, Parikshit Pratim Sharma, Christos Trompoukis, Jef Poortmans, Hariharsudan Sivaramakrishnan Radhakrishnan, Valerie Depauw, Robert Mertens, Ivan Gordon, Ounsi El Daif, Kris Van Nieuwenhuysen
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:734-742
Autor:
Kris Van Nieuwenhuysen, Maarten Debucquoy, Jonathan Govaerts, Hariharsudan Sivaramakrishnan Radhakrishnan, Roberto Martini, Ivan Gordon, Jef Poortmans, Robert Mertens, Valerie Depauw
Publikováno v:
IEEE Journal of Photovoltaics
A porous silicon-based layer transfer process to produce thin (30-50 μm) kerfless epitaxial foils (epifoils) is a promising approach toward high-efficiency solar cells. For high efficiencies, the epifoil must have high minority carrier lifetimes. Th
Layer transfer process assisted by laser scribing for thin film solar cells based on epitaxial foils
Publikováno v:
physica status solidi (a). 210:682-686
Autor:
Kris Van Nieuwenhuysen, Philipp Rosenits, Hariharsudan Sivaramakrishnan Radhakrishnan, Jef Poortmans, Frederic Dross, Maarten Debucquoy, Ivan Gordon, Robert Mertens
Publikováno v:
Progress in Photovoltaics: Research and Applications. 22:1118-1127
Porous silicon plays an important role in the concept of wafer-equivalent epitaxial thin-film solar cells. Although porous silicon is beneficial in terms of long-wavelength optical confinement and gettering of metals, it could adversely affect the qu