Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Kris A Bertness"'
Autor:
Mikel Gómez Ruiz, Matt D. Brubaker, Kris A. Bertness, Alexana Roshko, Hans Tornatzky, Manfred Ramsteiner, Oliver Brandt, Jonas Lähnemann
Publikováno v:
APL Materials, Vol 12, Iss 10, Pp 101123-101123-9 (2024)
Highly uniform arrays of site-controlled GaN nanowires are synthesized by selective area growth using a Si3N4 mask and molecular beam epitaxy. Systematic modulation of the emission along the nanowire axis is observed in spectrally resolved cathodolum
Externí odkaz:
https://doaj.org/article/7b6963fb71ed46c6b8d5398fc1f3d62c
Autor:
Kristen L. Genter, Matt D. Brubaker, Samuel Berweger, Jonas C. Gertsch, Kris A. Bertness, Pavel Kabos, Victor M. Bright
Publikováno v:
Journal of Microelectromechanical Systems. 31:483-485
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26b509cdd2dbdf76cf18aa543d234e20
https://doi.org/10.1109/jmems.2022.3172645
https://doi.org/10.1109/jmems.2022.3172645
Autor:
Matthew D. Brubaker, David R. Diercks, Norman A. Sanford, Brian P. Gorman, Kris A. Bertness, Ashwin K. Rishinaramangalam, Albert V. Davydov, Benjamin W. Caplins, Ann N. Chiaramonti, Luis Miaja-Avila, Daniel F. Feezell, Paul T. Blanchard
Publikováno v:
The Journal of Physical Chemistry C. 125:2626-2635
Laser-pulsed atom probe tomography (LAPT) is a materials characterization technique that has been widely applied in the study and characterization of III-nitride semiconductors. To date, most of th...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b765e137ba6a7adbe99b85b30e483af8
https://doi.org/10.1021/acs.jpcc.0c08753
https://doi.org/10.1021/acs.jpcc.0c08753
Publikováno v:
Crystals, Vol 8, Iss 9, p 366 (2018)
Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice
Externí odkaz:
https://doaj.org/article/7e13201d95264f88b79e974a6b2d1c2f
Autor:
Paul Blanchard, Matt Brubaker, Todd Harvey, Alexana Roshko, Norman Sanford, Joel Weber, Kris A. Bertness
Publikováno v:
Crystals, Vol 8, Iss 4, p 178 (2018)
While GaN nanowires (NWs) offer an attractive architecture for a variety of nanoscale optical, electronic, and mechanical devices, defects such as crystal polarity inversion domains (IDs) can limit device performance. Moreover, the formation of such
Externí odkaz:
https://doaj.org/article/28034416cc0643fe804d8629c5dd54e0
Publikováno v:
Appl Phys Lett
We report the use of optical Bragg scattering and homodyne interferometry to simultaneously measure all the first order cantilever-mode mechanical resonance frequencies and quality factors (Q) of gallium nitride nanowires (GaN NWs) in 100 NW periodic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::71707c53837b9fc9d329eb4f3890355f
https://pubmed.ncbi.nlm.nih.gov/33363292
https://pubmed.ncbi.nlm.nih.gov/33363292
Autor:
Matt D, Brubaker, Kristen L, Genter, Joel C, Weber, Bryan T, Spann, Alexana, Roshko, Paul T, Blanchard, Todd E, Harvey, Kris A, Bertness
Publikováno v:
Proc SPIE Int Soc Opt Eng
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N-polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and high-aspect-ratio n-type NW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::49f663e9da3fbd143948e55e8e0dcc99
https://pubmed.ncbi.nlm.nih.gov/33343056
https://pubmed.ncbi.nlm.nih.gov/33343056
Autor:
Bryan T. Spann, Paul J. Schuele, Albert V. Davydov, Alina Bruma, Kris A. Bertness, Alexey Y. Koposov
Publikováno v:
The Journal of Physical Chemistry C. 122:5119-5123
The recent development of quasi-two-dimensional (2D) semiconducting nanomaterials [nanoplatelets (NPLs)] prepared through solution-based chemistry has attracted significant attention in the field of color conversion materials. Herein, we demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96d3a70885428f5d74b62beeb172b297
https://doi.org/10.1021/acs.jpcc.7b10615
https://doi.org/10.1021/acs.jpcc.7b10615
Autor:
Parsian K. Mohseni, Alex P. Kolberg, Thomas S. Wilhelm, Mohadeseh A. Baboli, Alireza Abrand, Kris A. Bertness
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q134-Q136
A practical nanofabrication process is detailed here for the generation of black GaAs. Discontinuous thin films of Au nanoparticles are electrodeposited onto GaAs substrates to catalyze site-specific etching in a solution of KMnO4 and HF according to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72ccb62d2bb08e38951db652ee15109b
https://doi.org/10.1149/2.0311906jss
https://doi.org/10.1149/2.0311906jss
Autor:
Alexana Roshko, Matthew D. Brubaker, Paul T. Blanchard, Roy H. Geiss, Todd E. Harvey, Kris A. Bertness, Igor Levin
Publikováno v:
Journal of Materials Research. 32:936-946
A comparison of two electron microscopy techniques used to determine the polarity of GaN nanowires is presented. The techniques are convergent beam electron diffraction (CBED) in TEM mode and annular bright field (ABF) imaging in aberration corrected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d9a8ba41f8e82a4c892347f77eec360
https://doi.org/10.1557/jmr.2016.443
https://doi.org/10.1557/jmr.2016.443