Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Kremleva A.V."'
Publikováno v:
E3S Web of Conferences, Vol 592, p 05005 (2024)
The problem of early and reliable prediction of earthquakes, which can lead to catastrophic consequences, is far from being solved, so it remains extremely topical. The next step towards its solution, as it is supposed, could be the creation of a net
Externí odkaz:
https://doaj.org/article/eaa2c829e2074239b8e36b0bf1cc4ee0
Autor:
Mynbaeva M.G., Shirshnev P.S., Kremleva A.V., Smirnov A.N., Ivanova E.V., Zamoryanskaya M.V., Nikitina I.P., Lavrent’ev A.A., Mynbaeva K.D., Odnoblyudov M.A., Bauman D.A., Lipsanen H., Nikolaev V.I., Bougrov V.E., Romanov A.E.
Publikováno v:
Reviews on Advanced Materials Science, Vol 57, Iss 1, Pp 97-103 (2018)
Results of the studies of the properties of single-crystalline bulk β-Ga2O3 grown from the melt are presented. High chemical purity and phase uniformity of the grown material are demonstrated. Raman spectroscopy studies confirmed low energies of opt
Externí odkaz:
https://doaj.org/article/9b3680e658544bd496840d2a12cfabc3
Autor:
Smirnov, A.M., Kremleva, A.V., Ivanov, A.Yu., Myasoedov, A.V., Sokura, L.A., Kirilenko, D.A., Sharofidinov, Sh.Sh., Romanov, A.E.
Publikováno v:
In Materials & Design February 2023 226
Autor:
Bauman, D.A., Borodkin, A.I., Petrenko, A.A., Panov, D.I., Kremleva, A.V., Spiridonov, V.A., Zakgeim, D.A., Silnikov, M.V., Odnoblyudov, M.A., Romanov, A.E., Bougrov, V.E.
Publikováno v:
In Acta Astronautica March 2021 180:125-129
Akademický článek
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Autor:
Mynbaeva, M.G., Sitnikova, A.A., Smirnov, A.N., Mynbaev, K.D., Lipsanen, H., Kremleva, A.V., Bauman, D.A., Bougrov, V.E., Romanov, A.E.
Self-organization mechanisms promoting elimination of cracks in thick GaN layers grown on sapphire substrates are considered on the basis of the experimental results on the fabrication of the layers by Hydride Vapor-Phase Epitaxy on MOCVD-grown GaN/A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf74feccf3b1ce1fc2dd3dc579994ae7
Autor:
Butenko, P.N., Panov, D.I., Kremleva, A.V., Zakgeim, D.A., Nashchekin, A.V., Smirnova, I.G., Bauman, D.A., Romanov, A.E., Bougrov, V.E.
We propose a technuque of liquid-phase growth of (AlxGa1-x)2O3 crystals with variable and controlled Al content in them. When using the Czochralski growth process Ga2O3 melt was dosed by sapphire seed. By applying of the special growth zone and the r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0a6d3c64e1670d08e66bd2811b587c
Results of structural characterization of (AlxGa1-x)2O3 single crystals grown from the melt with Al content x up to 0.04 are presented. Bulk (AlxGa1-x)2O3 crystals were grown by exploring the Czochralski method [1]. Transmission electron microscopy (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68781d66fc88ec33ec72ec83113f4a88
Akademický článek
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