Zobrazeno 1 - 10
of 530
pro vyhledávání: '"Kreiner G."'
Publikováno v:
Zeitschrift für Kristallographie - New Crystal Structures, Vol 220, Iss 3, Pp 289-404 (2005)
Mg3Pd, hexagonal, P63cm (no. 185), a = 7.987(1) Å, c = 8.422(1) Å, V = 465.3 Å3, Z = 6, Rgt(F) = 0.023, wRref(F2) = 0.045, T = 293 K.
Externí odkaz:
https://doaj.org/article/eda5a8e57dd340819f3ee14bd1ce705d
Publikováno v:
Zeitschrift für Kristallographie - New Crystal Structures, Vol 221, Iss 3, Pp 269-270 (2006)
Externí odkaz:
https://doaj.org/article/1b1cfdea3b714f51b0993fb3621b2e05
Publikováno v:
Zeitschrift für Kristallographie - New Crystal Structures, Vol 221, Iss 3, Pp 267-268 (2006)
CMo2PrSi2, tetragonal, P4/mmm (no. 123), a = 4.2139(3) Å, c = 5.4093(4) Å, V = 96.1 Å3, Z = 1, Rgt(F) = 0.020, wRref(F2) = 0.042, T = 295 K.
Externí odkaz:
https://doaj.org/article/6119633d76034f64bf7ddeba393b8106
Publikováno v:
Zeitschrift für Kristallographie - New Crystal Structures, Vol 220, Iss 1-4, Pp 133-134 (2005)
Externí odkaz:
https://doaj.org/article/7925826d96cd47d595f1ac519b538333
Publikováno v:
Zeitschrift für Kristallographie - New Crystal Structures, Vol 220, Iss 1-4, Pp 139-140 (2005)
Externí odkaz:
https://doaj.org/article/6b2d0d33540242fead09309cc4271936
Publikováno v:
Zeitschrift für Kristallographie - New Crystal Structures, Vol 220, Iss 1-4, Pp 311-312 (2005)
Externí odkaz:
https://doaj.org/article/cba66ccf07134871959281dee002132d
Autor:
Berry, T., Ouardi, S., Fecher, G. H., Balke, B., Kreiner, G., Auffermann, G., Schnelle, W., Felser, C.
The thermoelectric properties of n type semiconductor, TiNiSn is optimized by partial substitution with metallic, MnNiSb in the half Heusler structure. Herein, we study the transport properties and intrinsic phase separation in the system. The Ti1-xM
Externí odkaz:
http://arxiv.org/abs/1610.02657
Autor:
Beleanu, A., Kiss, J., Kreiner, G., Köhler, C., Müchler, L., Schnelle, W., Burkhardt, U., Chadov, S., Medvediev, S., Ebke, D., Cordier, G., Albert, B., Hoser, A., Bernardi, F., Larkin, T. I., Pröpper, D., Boris, A. V., Keimer, B., Felser, C.
Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the w
Externí odkaz:
http://arxiv.org/abs/1307.6404
Autor:
Moroni-Klementowicz, D., Brando, M., Albrecht, C., Duncan, W. J., Grosche, F. M., Gruener, D., Kreiner, G.
Publikováno v:
Phys. Rev. B 79, 224410 (2009)
We present a systematic study of transport and thermodynamic properties of the Laves phase system Nb$_{1-y}$Fe$_{2+y}$. Our measurements confirm that Fe-rich samples, as well as those rich in Nb (for $\mid y\mid\geq 0.02$), show bulk ferromagnetism a
Externí odkaz:
http://arxiv.org/abs/0905.3051
Autor:
Barut, J., Rafa-Zabłocka, K., Chmielarz, P., Domanskyi, A., Bagińska, M., Herian, M., Gołembiowska, K., Kreiner, G.
Publikováno v:
In Neuroscience Applied 2022 1 Supplement 2