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Autor:
Arroyo Rojas Dasilva Y.a, Rossell M.D.a, Keller D.a b, Gröning P.c, Isa F.d, Kreiliger T.d, Von Känel H.d, Isella G.e, Erni R.a
Publikováno v:
Applied Physics Letters
Threading dislocations (TDs) in germanium (Ge) crystals epitaxially grown on a patterned (001)-silicon (Si) substrate are investigated using transmission electron microscopy (TEM) techniques. Analysis of dislocations performed on the Ge crystals reve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::da600b3a6cf54d6d33ba8ee30c05563a
http://hdl.handle.net/11311/971679
http://hdl.handle.net/11311/971679
