Zobrazeno 1 - 10
of 1 333
pro vyhledávání: '"Kravchenko S"'
Autor:
Melnikov, M. Yu., Smirnov, D. G., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an ord
Externí odkaz:
http://arxiv.org/abs/2409.06686
Publikováno v:
Appl. Phys. Lett. 125, 153102 (2024)
We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlapp
Externí odkaz:
http://arxiv.org/abs/2405.18229
Publikováno v:
Phys. Rev. B 109, L041114 (2024)
We report the observation of two-threshold voltage-current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in the insulating state at low densities in the 2D electron system in ultra-high mobility S
Externí odkaz:
http://arxiv.org/abs/2310.03145
Autor:
Melnikov, M. Yu., Shakirov, A. A., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
Publikováno v:
Sci. Rep. 13, 17364 (2023)
The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effect
Externí odkaz:
http://arxiv.org/abs/2304.04272
Autor:
Shashkin, A. A., Kravchenko, S. V.
Publikováno v:
JETP 135, 432 (2022)
Using several independent methods, we find that the metal-insulator transition occurs in the strongly-interacting two-valley two-dimensional electron system in ultra-high mobility SiGe/Si/SiGe quantum wells in zero magnetic field. The transition surv
Externí odkaz:
http://arxiv.org/abs/2208.05356
Publikováno v:
Low Temp. Phys. 48, 452 (2022)
Self-organizing neural networks are used to analyze uncorrelated white noises of different distribution types (normal, triangular, and uniform). The artificially generated noises are analyzed by clustering the measured time signal sequence samples wi
Externí odkaz:
http://arxiv.org/abs/2206.02496
Publikováno v:
JETP Lett. 116, 156 (2022)
We review recent experimental results indicating the band flattening and Landau level merging at the chemical potential in strongly-correlated two-dimensional (2D) electron systems. In ultra-clean, strongly interacting 2D electron system in SiGe/Si/S
Externí odkaz:
http://arxiv.org/abs/2204.12565
Autor:
Kagalovsky, V.1 (AUTHOR), Kravchenko, S. V.2 (AUTHOR) s.kravchenko@northeastern.edu, Nemirovsky, D.1 (AUTHOR)
Publikováno v:
Scientific Reports. 6/1/2024, Vol. 14 Issue 1, p1-7. 7p.
Autor:
Shashkin, A. A., Melnikov, M. Yu., Dolgopolov, V. T., Radonjić, M. M., Dobrosavljević, V., Huang, S. -H., Liu, C. W., Zhu, Amy Y. X., Kravchenko, S. V.
Publikováno v:
Sci. Rep. 12, 5080 (2022)
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional elec
Externí odkaz:
http://arxiv.org/abs/2106.05927
Autor:
Mikhasenko M., Dorofeev V., Ekimov A., Gotman V., Ivashin A., Kachaev I., Kalendarev V., Khokhlov Yu., Kholodenko M., Konstantinov V., Kravchenko S., Matveev V., Nikolaenko V., Plekhanov A., Ryabchikov D., Salomatin Yu., Sugonyaev V., Zaitsev A.
Publikováno v:
EPJ Web of Conferences, Vol 81, p 02012 (2014)
7 × 106 events of the reaction π−N → π−π0N′ were collected at the VES experiment. Mass independent angular analysis is performed to study production mechanism of ρ-meson. t-channel ω-exchange and π-exchange are isolated. The analysis i
Externí odkaz:
https://doaj.org/article/5d4a2cb0676541289c73b625e359ed72