Identification of the nature of traps involved in the field cycling of Hf₀.₅Zr₀.₅O₂-based ferroelectric thin films

Autor: Islamov, Damir R., Gritsenkoa, Vladimir A., Perevalov, Timofey V., Pustovarov, Vladimir A., Orlov, Oleg M., Chernikova, Anna G., Markeev, Andrey M., Slesazeck, Stefan, Schröder, Uwe, Mikolajick, Thomas, Krasnikov, Gennadiy Ya.

The discovery of ferroelectricity in hafnium oxide has revived the interest in ferroelectric memories as a viable option for low power non-volatile memories. However, due to the high coercive field of ferroelectric hafnium oxide, instabilities in the

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[Formula: see text]-symmetric interference transistor.

Autor: Gorbatsevich AA; P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Division of solid state physics, Moscow, 119991 Russia.; JSC Molecular Electronics Research Institute, Zelenograd, Moscow 124460 Russia., Krasnikov GY; JSC Molecular Electronics Research Institute, Zelenograd, Moscow 124460 Russia., Shubin NM; P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Division of solid state physics, Moscow, 119991 Russia.; JSC Molecular Electronics Research Institute, Zelenograd, Moscow 124460 Russia.; Department of quantum physics and nanoelectronics, National Research University of Electronic Technology, Zelenograd, Moscow 124498 Russia.

Publikováno v: Scientific reports [Sci Rep] 2018 Oct 25; Vol. 8 (1), pp. 15780. Date of Electronic Publication: 2018 Oct 25.