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pro vyhledávání: '"Krapyvko G.I."'
Publikováno v:
Biomedicinskaâ Inženeriâ i Èlektronika, Vol 4, Iss 18 (2017)
The article describes the technological processes for manufacturing high-voltage diodes, varicaps and Schottky diodes using layers of porous anodic oxide of silicon. It is shown that the growth features of anodic oxide of silicon at an increased volt
Externí odkaz:
https://doaj.org/article/88723df582f64f899987d98449767dc7
