Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Krakovinsky, A."'
Autor:
Kom Kammeugne, R., Leroux, C., Cluzel, J., Vauche, L., Le Royer, C., Krakovinsky, A., Gwoziecki, R., Biscarrat, J., Gaillard, F., Charles, M., Bano, E., Ghibaudo, G.
Publikováno v:
In Solid State Electronics October 2021 184
Autor:
C. Le Royer, B. Mohamad, J. Biscarrat, L. Vauche, R. Escoffier, J. Buckley, S. Becu, R. Riat, C. Gillot, M. Charles, S. Ruel, P. Pimenta-Barros, N. Posseme, P. Besson, F. Boudaa, C. Vannuffel, W. Vandendaele, A.G. Viey, A. Krakovinsky, M.-A. Jaud, R. Modica, F. Iucolano, R. Le Tiec, S. Levi, M. Orsatelli, R. Gwoziecki, V. Sousa
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Autor:
A. Krakovinsky, Louis Gerrer, R. Modica, Gerard Ghibaudo, Jérôme Biscarrat, J. Cluzel, William Vandendaele, Marie-Anne Jaud, Gaudenzio Meneghesso, F. Gaillard, Steve W. Martin, Xavier Garros, A. G. Viey, R. Gwoziecki, Marc Plissonnier, Ferdinando Iucolano, Matteo Meneghini
Publikováno v:
IEEE Transactions on Electron Devices. 68:2017-2024
In this article, threshold-voltage VTH instabilities under positive gate voltage stress VGStress in GaN-on-Si devices are thoroughly investigated. Measurement-stress-measurement pBTI technique using ultrafast VG ramp was applied in this study. PBTI t
Autor:
Matthew Charles, J. Cluzel, A. Krakovinsky, Gerard Ghibaudo, R. Kom Kammeugne, Edwige Bano, Jérôme Biscarrat, Laura Vauche, C. Le Royer, Charles Leroux, F. Gaillard, R. Gwoziecki
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2021, 184, pp.108078. ⟨10.1016/j.sse.2021.108078⟩
Solid-State Electronics, 2021, 184, pp.108078. ⟨10.1016/j.sse.2021.108078⟩
Solid-State Electronics, Elsevier, 2021, 184, pp.108078. ⟨10.1016/j.sse.2021.108078⟩
Solid-State Electronics, 2021, 184, pp.108078. ⟨10.1016/j.sse.2021.108078⟩
International audience; A new protocol based on Y-function is used for accurate statistical extraction of electrical parameters of High Electron Mobility Transistor (HEMT) devices for GaN technology. This protocol presented here is used for extractio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfe9b23ea7e05f05860d196b5de0dc03
https://hal-cea.archives-ouvertes.fr/cea-03250807
https://hal-cea.archives-ouvertes.fr/cea-03250807
Akademický článek
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Autor:
Marie-Anne Jaud, A. Krakovinsky, Steve W. Martin, A. G. Viey, Ferdinando Iucolano, R. Modica, Matteo Meneghini, Jérôme Biscarrat, Gerard Ghibaudo, R. Gwoziecki, V. Sousa, J. Coignus, William Vandendaele, F. Gaillard, J. Cluzel, Gaudenzio Meneghesso
Publikováno v:
IRPS
In this study, we investigate the difference between I D (V G ) and C(V G ) pBTI shifts on GaN-on-Si E-mode MOS-channel HEMTs, under various gate voltage stresses (V GStress ) and temperatures (T). A new experimental setup using ultra-fast and simult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c27abbf611281e545d7886f8d71e545
http://hdl.handle.net/11577/3390786
http://hdl.handle.net/11577/3390786
Autor:
A. Krakovinsky, Jérôme Biscarrat, R. Gwoziecki, Ferdinando Iucolano, Matteo Meneghini, Xavier Garros, F. Gaillard, Steve W. Martin, R. Modica, Marie-Anne Jaud, William Vandendaele, A. G. Viey, Marc Plissonnier, Gaudenzio Meneghesso, Louis Gerrer, J. Cluzel, G. Ghibaudo
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
In this paper, threshold voltage V TH instabilities under positive gate voltage stress (V GStress ) are thoroughly investigated on GaN-on-Si Enhancement-mode MOS-channel HEMTs. An analysis of pBTI transients performed at several V GStress and tempera
Autor:
R. Gwoziecki, William Vandendaele, A. Krakovinsky, Steve W. Martin, A. G. Viey, Marie-Anne Jaud, Marc Plissonnier, Laura Vauche, R. Modica, Ferdinando Iucolano, F. Gaillard, Jérôme Biscarrat, C. Le Royer
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
This paper aims to investigate the interface traps density (Dit) extraction on MOS gate stacks processed on GaN-on-Si substrates. CGV (Capacitance-Conductance) measurements under different frequencies (f = 1kHz-1MHz) and temperatures (T = 20K-500K) o
Akademický článek
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K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
A. G. Viey, Gerard Ghibaudo, A. Krakovinsky, Steve W. Martin, Gaudenzio Meneghesso, Ferdinando Iucolano, Matteo Meneghini, F. Gaillard, J. Cluzel, Enrico Zanoni, William Vandendaele, Marc Plissonnier, R. Modica, R. Gwoziecki, Marie-Anne Jaud, J.-P. Barnes
In this paper, we investigate the influence of negative gate stress on threshold voltage V TH instabilities in GaN-on-Si devices. This study has been carried out by using ultra-fast Measurement-Stress-Measurement (MSM) procedure on GaN-on-Si E-mode M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29d4b808e3ea6e98a3567c3d8b99d99f
http://hdl.handle.net/11577/3349645
http://hdl.handle.net/11577/3349645