Výsledky vyhledávání - "Krämer, M.C.J.C.M."

11.9 W output power at 4 GHz from 1 mm AlGaN/GaN HEMT

Autor: Krämer, M.C.J.C.M., Karouta, F., Kwaspen, J.J.M., Rudzinski, M., Larsen, P.K., Suijker, E.M., Hek, P.A. de, Rödle, T., Volokhine, I., Kaufmann, L.M.F.

Publikováno v: Meeting Abstracts of the 214th ECS (Electro Chemical Society) Meeting-October 12-17, 2008, Honolulu, HI, paper 2078

A high electrical breakdown field combined with a high electron saturation velocity make GaN very attractive for high power high frequency electronics. The maximum drain current densities of AlGaN/GaN HFETs range from 1.0 A/mm to 1.5 A/mm [1-3]. Henc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::18861bad88673b3673d53450d95b7716
http://resolver.tudelft.nl/uuid:d7b8a4de-9dd1-47b2-860b-a9eada684c76

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11.9 W output power at S-band from 1 mm AiGaN/GaN HEMTS

Autor: Krämer, M.C.J.C.M., Karouta, F., Kwaspen, J.J.M., Rudzinski, M., Larsen, P.K., Suiker, E.M., Hek, de, A.P., Rödle, T., Volokhine, I., Kaufmann, L.M.F.

Publikováno v: Proceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7), 169-179
STARTPAGE=169;ENDPAGE=179;TITLE=Proceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7)

In this paper we present an optimized process for fabrication of dispersion-free small (Wg = 80 µm) and large (Wg = 0.25 mm, 0.5 mm, and 1.0 mm) gate periphery n.i.d. AlGaN/GaN HFETs grown by MOVPE on s.i. 4H-SiC substrates. First small periphery de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::fb0ec11671a483e3b85f9d59cc26bba6
https://research.tue.nl/nl/publications/d5e6d0ff-ea68-4adb-a590-f545463c4a27

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Influence of the structural and compositional properties of PECVD silicon nitride layers on the passivation of AIGaN/GaN HEMTs

Autor: Karouta, F., Krämer, M.C.J.C.M., Kwaspen, J.J.M., Grzegorczyk, A., Hageman, P.R., Hoex, B., Kessels, W.M.M., Klootwijk, J.H., Timmering, E.C., Smit, M.K., Wang, J., Shiojima, K.

Publikováno v: proceedings of the. ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7), October 12-October 17, 2008, Honolulu, Hawaii, 181-191
STARTPAGE=181;ENDPAGE=191;TITLE=proceedings of the. ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7), October 12-October 17, 2008, Honolulu, Hawaii

We have investigated the influence of the structural and compositional properties of silicon nitride layers on the passivation of AlGaN/GaN HEMTs grown on sapphire substrates by assessing their continuous wave (CW) and pulsed current-voltage (I-V) ch

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::27188733202362801b55015e913b069a
https://research.tue.nl/nl/publications/27ba533e-5a45-42a6-b4f2-5404d9dc2e3c

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Gallium nitride-based microwave high-power heterostructure field-effect transistors

Autor: Krämer, M.C.J.C.M.

The research described in this thesis has been carried out within a joint project between the Radboud Universiteit Nijmegen (RU) and the Technische Universiteit Eindhoven (TU/e) with the title: "Performance enhancement of GaN-based microwave power am

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::c3555adc2413b2604b939b55cf3ca78d
https://research.tue.nl/nl/publications/6a393b15-924c-4ecb-bf81-7f237da8e9f4

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Enhancement of p-GaN conductivity using PECVD SiOx

Autor: Karouta, F., Kappers, M.J., Krämer, M.C.J.C.M., Jacobs, B.

Publikováno v: Electrochemical and Solid-State Letters, 8(7), 170-171. Electrochemical Society, Inc.

A technique to enhance the hole concentration in activated Mg-doped p-type GaN epitaxial layers is described. The method consists of depositing a porous plasma-nhancedchemical vapor deposited SiOx layer on top of p-GaN after which the sample is heate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::c2c33c06d33cc2cee3053a3f2bcd079b
https://research.tue.nl/nl/publications/d40a37a8-46fe-49ea-8221-2b7cbd4863b6

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Passive components on AlN for application in AlGaN/GaN power amplifiers

Autor: Jacobs, B., van Straaten, B.C.L., Krämer, M.C.J.C.M., Karouta, F., Hek, de, A.P., Suijker, E., Dijk, van, R., Northrup, John E.

Publikováno v: GaN and related alloys : symposium, 2001, held November 26-30, 2001, Boston, Massachusetts, U.S.A., 629-634
STARTPAGE=629;ENDPAGE=634;TITLE=GaN and related alloys : symposium, 2001, held November 26-30, 2001, Boston, Massachusetts, U.S.A.

We have investigated Coplanar Waveguide (CPW) elements on AlN for use in future AlGaN/GaN based power amplifiers. This technology becomes crucial if a via-hole technology is not available. Lines, discontinuities, metal-insulator-metal (MIM) capacitor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39a5e0d43e04ed735d34793883c6072f
https://doi.org/10.1557/proc-693-i11.1.1

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Bulk and contact 1/f noise in GaN TLM structures

Autor: Feyaerts, R., Vandamme, L.K.J., Trefan, G., Krämer, M.C.J.C.M., Zellweger, C., Ryssel, H., Wachutka, G., Grunbacher, H.

Publikováno v: 31th European Solid-State Device Research Conference, 355-358
STARTPAGE=355;ENDPAGE=358;TITLE=31th European Solid-State Device Research Conference

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::44167c5ad06c8295789fdc9e244eae08
https://research.tue.nl/nl/publications/67db1569-e36a-42ad-99c9-30c6261bac06

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Investigation of p-contacts in Mg-doped GaN and the effect of various pre-treatments

Autor: Karouta, F., Ruscassie, R., Krämer, M.C.J.C.M., Jacobs, B., Moerman, I., Berghmans, F., Thienpont, H., Danckaert, J., Desmet, L.

Publikováno v: Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium, 73-77
STARTPAGE=73;ENDPAGE=77;TITLE=Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium

P-contacts on MOVPE-grown Mg-doped GaN were investigated as function of various pretreatments in order to enhance the hole concentration of the starting material. After a Mgactivation at 950°C for 30 s in N2-ambient the samples show a typical hole c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::0f37fbd1bb5130d253f5afbe851408f9
https://research.tue.nl/nl/publications/3ba42d29-c8fb-4b4b-a560-3598bd93c47b

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