Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Kozue Hotozuka"'
Autor:
Norihito Kawaguchi, Moeka Taniguchi, Makoto Tanimura, Kozue Hotozuka, Takashi Uchida, Akira Tateno, Kazuma Akikubo, Masaru Tachibana, Ryo Yoshie
Publikováno v:
Electrochimica Acta. 306:132-142
The effect of nitrogen (N) and iron (Fe) on oxygen reduction reaction (ORR) was investigated by using carbon nanowalls (CNWs) as carbon matrix. The dopings of N and Fe into CNWs are carried out by N plasma and Fe sputtering, respectively. The onset p
Fe-N-doped carbon catalysts prepared by hybrid PECVD/sputtering system for oxygen reduction reaction
Autor:
Masaru Tachibana, Hitomi Ito, Gen Ito, Ikuo Kinoshita, Akira Tateno, Kozue Hotozuka, Ryo Yoshie, Takahiro Matsuo, Hidenobu Murata, Norihito Kawaguchi
Publikováno v:
Chemical Physics Letters. 679:71-76
A hybrid plasma-enhanced chemical vapor deposition (PECVD)/sputtering system was developed to prepare iron (Fe)-nitrogen (N)-doped carbon catalysts for oxygen reduction reaction (ORR). This hybrid system combines PECVD effective for the synthesis of
Autor:
Akira Ashikawa, Ryo Yoshie, Kyohei Kato, Kun'ichi Miyazawa, Hidenobu Murata, Kozue Hotozuka, Masaru Tachibana
Publikováno v:
Journal of Applied Physics; 2015, Vol. 118 Issue 21, p214303-1-214303-6, 6p, 1 Black and White Photograph, 2 Charts, 4 Graphs
Autor:
Kozue Hotozuka, Yuichi Funato, Noboru Sato, Yukihiro Shimogaki, Yasuyuki Fukushima, Takeshi Momose
Publikováno v:
ECS Transactions. 50:75-83
A multi-scale analysis, which is a macro and a micro-scale analysis, was performed on the chemical vapor deposition (CVD) for the synthesis of silicon carbide (SiC) from mono-methyl tri-chlorosilane (MTS:CH3SiCl3) and H2 to elucidate the major reacti
Autor:
Yuichi Funato, Kozue Hotozuka, Yukihiro Shimogaki, Hidetoshi Sugiura, Yasuyuki Fukushima, Noboru Sato, Takeshi Momose
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:P492-P497
Silicon carbide (SiC) films were prepared from methyltrichlorosilane (MTS) and H2 at temperatures ranging from 900 to 1000◦C by low-pressure chemical vapor deposition (CVD). Multi-scale analysis was performed on the SiC film growth rate using a gro
Publikováno v:
Key Engineering Materials. :1598-1603
Single-crystal TiO2 nanorod film was synthesized directly on FTO substrates with various lengths by changing the hydrothermal growth parameters including growth time and growth temperature. The obtained nanorod arrays were incorporated in organic sol
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:7988-7993
A kinetic study, which was performed by using multi-scale (a macro and a micro-scale) analysis, is presented in order to determine the reaction mechanism of the chemical vapor deposition (CVD) of silicon carbide (SiC) from CH3SiCl3 (MTS)/H2 gaseous m
Autor:
Kyohei Kato, Hidenobu Murata, Ryo Yoshie, Akira Ashikawa, Masaru Tachibana, Kun'ichi Miyazawa, Kozue Hotozuka
Publikováno v:
Journal of Applied Physics. 118:214303
Carbon nanowalls (CNWs) with different domain sizes were synthesized by a dc plasma-enhanced chemical vapor deposition. Platinum (Pt) loading on the CNWs (Pt/CNW) was carried out by a solution reduction method. As a result, Pt nanoparticles were pref
Autor:
Yasuyuki Fukushima, Kozue Hotozuka, Yuichi Funato, Noboru Sato, Takeshi Momose, Yukihiro Shimogaki
Publikováno v:
ECS Meeting Abstracts. :2328-2328
not Available.
Publikováno v:
Japanese Journal of Applied Physics. 48:020207
We have investigated the growth and photodecomposition of the pentacene ultrathin film grown on the TiO2-terminated SrTiO3(001) single crystal substrate by in situ Auger electron spectroscopy (AES) and ex situ atomic force microscopy (AFM). The caref