Zobrazeno 1 - 10
of 654
pro vyhledávání: '"Kozikov, A. A."'
Autor:
Giza, Marcin1 (AUTHOR), Kozikov, Aleksey2 (AUTHOR) Aleksey.kozikov@newcastle.ac.uk, Lalaguna, Paula L.1 (AUTHOR), Hutchinson, Jake D.3 (AUTHOR), Verma, Vaibhav2 (AUTHOR), Vella, Benjamin1 (AUTHOR), Kumar, Rahul1 (AUTHOR), Hill, Nathan2 (AUTHOR), Sirbu, Dumitru2 (AUTHOR), Arca, Elisabetta2 (AUTHOR), Healy, Noel2 (AUTHOR), Milot, Rebecca L.3 (AUTHOR), Kadodwala, Malcolm1 (AUTHOR), Docampo, Pablo1 (AUTHOR) Pablo.docampo@glasgow.ac.uk
Publikováno v:
Small Structures. Nov2024, Vol. 5 Issue 11, p1-12. 12p.
Autor:
Catanzaro, Alessandro, Genco, Armando, Louca, Charalambos, Ruiz-Tijerina, David A., Gillard, Daniel J., Sortino, Luca, Kozikov, Aleksey, Alexeev, Evgeny M., Pisoni, Riccardo, Hague, Lee, Watanabe, Kenji, Taniguchi, Takashi, Ensslin, Klauss, Novoselov, Kostya S., Fal'ko, Vladimir, Tartakovskii, Alexander I.
Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostr
Externí odkaz:
http://arxiv.org/abs/2309.13312
Autor:
Marcin Giza, Aleksey Kozikov, Paula L. Lalaguna, Jake D. Hutchinson, Vaibhav Verma, Benjamin Vella, Rahul Kumar, Nathan Hill, Dumitru Sirbu, Elisabetta Arca, Noel Healy, Rebecca L. Milot, Malcolm Kadodwala, Pablo Docampo
Publikováno v:
Small Structures, Vol 5, Iss 11, Pp n/a-n/a (2024)
Surface treatment of perovskite materials with their layered counterparts has become an ubiquitous strategy for maximizing device performance. While layered materials confer great benefits to the longevity and long‐term efficiency of the resulting
Externí odkaz:
https://doaj.org/article/9e23af9b3902453cb30dd8c5a747d2d3
Autor:
Alexeev, Evgeny M., Mullin, Nic, Ares, Pablo, Nevison-Andrews, Harriet, Skrypka, Oleksandr V., Godde, Tillmann, Kozikov, Aleksey, Hague, Lee, Wang, Yibo, Novoselov, Kostya S., Fumagalli, Laura, Hobbs, Jamie K., Tartakovskii, Alexander I.
The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the de
Externí odkaz:
http://arxiv.org/abs/2004.05624
Autor:
Lyons, T. P., Gillard, D., Molina-Sánchez, A., Misra, A., Withers, F., Keatley, P. S., Kozikov, A., Taniguchi, T., Watanabe, K., Novoselov, K. S., Fernández-Rossier, J., Tartakovskii, A. I.
Publikováno v:
Nature Communications 11, 6021 (2020)
Semiconducting ferromagnet-nonmagnet interfaces in van der Waals heterostructures present a unique opportunity to investigate magnetic proximity interactions dependent upon a multitude of phenomena including valley and layer pseudospins, moir\'e peri
Externí odkaz:
http://arxiv.org/abs/2004.04073
Autor:
Binder, J., Howarth, J., Withers, F., Molas, M. R., Taniguchi, T., Watanabe, K., Faugeras, C., Wysmolek, A., Danovich, M., Fal'ko, V. I., Geim, A. K., Novoselov, K. S., Potemski, M., Kozikov, A.
The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large pumping rates
Externí odkaz:
http://arxiv.org/abs/1905.10076
Рассматривается проблема квалификации совокупности сделок хозяйственного общества как взаимосвязанных для целей института крупной с
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1594::bc551b2b7cd738371c63d674211b8318
http://elib.bsu.by/handle/123456789/208677
http://elib.bsu.by/handle/123456789/208677
Autor:
Son, Seok-Kyun, Šiškins, Makars, Mullan, Ciaran, Yin, Jun, Kravets, Vasyl G., Kozikov, Aleksey, Ozdemir, Servet, Alhazmi, Manal, Holwill, Matthew, Watanabe, Kenji, Taniguchi, Takashi, Ghazaryan, Davit, Novoselov, Kostya S., Fal'ko, Vladimir I., Mishchenko, Artem
The excellent electronic and mechanical properties of graphene allow it to sustain very large currents, enabling its incandescence through Joule heating in suspended devices. Although interesting scientifically and promising technologically, this pro
Externí odkaz:
http://arxiv.org/abs/1710.09607
Autor:
Rooney, Aidan. P., Kozikov, Aleksey, Rudenko, Alexander N., Prestat, Eric, Hamer, Matthew J, Withers, Freddie, Cao, Yang, Novoselov, Kostya S., Katsnelson, Mikhail I., Gorbachev, Roman, Haigh, Sarah J.
Publikováno v:
Nano Lett 2017, 17 (9), pp 5222
Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the inter
Externí odkaz:
http://arxiv.org/abs/1707.08140
Autor:
Binder, J., Withers, F., Molas, M. R., Faugeras, C., Nogajewski, K., Watanabe, K., Taniguchi, T., Kozikov, A., Geim, A. K., Novoselov, K. S., Potemski, M.
We report on experimental investigations of an electrically driven WSe2 based light-emitting van der Waals heterostructure. We observe a threshold voltage for electroluminescence significantly lower than the corresponding single particle band gap of
Externí odkaz:
http://arxiv.org/abs/1702.08333