Zobrazeno 1 - 10
of 290
pro vyhledávání: '"Kow Ming Chang"'
Autor:
Srikant Kumar Mohanty, Debashis Panda, K. Poshan Kumar Reddy, Po-Tsung Lee, Chien-Hung Wu, Kow-Ming Chang
Publikováno v:
Ceramics International. 49:16909-16917
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0100c5303537ff1193dc990830e0642a
https://doi.org/10.1016/j.ceramint.2023.02.052
https://doi.org/10.1016/j.ceramint.2023.02.052
Autor:
Chien-Hung Wu, Shuo-Yen Lin, Po-Tsun Liu, Wen-Chun Chung, Kow-Ming Chang, Der-Hsien Lien, Yi-Jie Wang
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 17:1548-1553
Low temperature poly-crystalline silicon thin-film transistors (LTPS-TFTs) and indium-gallium-zinc-oxide TFTs (IGZO-TFTs) are potential candidates for future technology of various displays. Due to its simple manufacturing process, low cost and good u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acbc39a962b189d88cdb5d3d0efacd96
https://doi.org/10.1166/jno.2022.3341
https://doi.org/10.1166/jno.2022.3341
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 17:1226-1230
Since the first n-type TFT was introduced in 1962, it was made of polycrystalline cadmium sulfide (CdS) as the active layer, silicon dioxide (SiO2) and gold (Au) as the insulator electrodes. Now, n-type TFT is still the most applications in display p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a27e83fbc833c127cc48146982bf5d1f
https://doi.org/10.1166/jno.2022.3294
https://doi.org/10.1166/jno.2022.3294
Publikováno v:
ACS Applied Electronic Materials. 4:4265-4272
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad6e48f7c41f3eca86256760044c3d30
https://doi.org/10.1021/acsaelm.2c00272
https://doi.org/10.1021/acsaelm.2c00272
Autor:
Kow-ming Chang, Jia-Chuan Lin, Poshan Kumar Reddy, Om Kumar Prasad, Chien-Hung Wu, Srikant Kumar Mohanty
Publikováno v:
IEEE Electron Device Letters. 42:1770-1773
Gradual conduction tuning with a large memory window is essential for realizing multilevel switching memristive devices. In this work, we demonstrated 3-bit per cell storage capability with excellent endurance and retention behavior of AlN/AlO memris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83f534bdfc730bf4b3971b2d785d0f16
https://doi.org/10.1109/led.2021.3125151
https://doi.org/10.1109/led.2021.3125151
Autor:
Chien-Hung Wu, Shuo-Yen Lin, Wen-Chun Chung, Kow-Ming Chang, Po-Tsun Liu, Der-Hsien Lien, Yu-Hsuan Lin
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 16:1733-1738
With better field-effect mobility (>10 cm2/V·S), smaller subthreshold swing (S.S), and other electrical characteristics, amorphous IGZO thin film transistors (a-IGZO TFTs) has been studied extensively for its promising applications, such as liquid c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b09b11b26ae8a41a87d3e969efd97d1
https://doi.org/10.1166/jno.2021.3120
https://doi.org/10.1166/jno.2021.3120
Publikováno v:
2022 IEEE 4th Eurasia Conference on IOT, Communication and Engineering (ECICE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91404213cd91c53ca4806a253ddc237e
https://doi.org/10.1109/ecice55674.2022.10042818
https://doi.org/10.1109/ecice55674.2022.10042818
Autor:
Srikant Kumar Mohanty, Kuppam Poshan Kumar Reddy, Chien-Hung Wu, Po-Tsung Lee, Kow-Ming Chang, Prabhakar Busa, Yaswanth Kuthati
Publikováno v:
Electronics; Volume 11; Issue 21; Pages: 3432
In this work, we investigated the effect of the tungsten nitride (WNx) diffusion barrier layer on the resistive switching operation of the aluminum nitride (AlN) based conductive bridge random access memory. The WNx barrier layer limits the diffusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::243fbef0798040c7821664d240661ac3
Autor:
Li-Wei Yeh, Yu-Xin Zhang, Kow-Ming Chang, Chien-Hung Wu, Yi-Ming Chen, Albert Chin, Shih-Ho Chang
Publikováno v:
Journal of Nanoscience and Nanotechnology. 21:4763-4767
Transparent conductive oxide (TCO) semiconductors are attracted considerable attention due to a wide range of applications, such as flat panel display (FPD), touch panels, solar cells, and other optoelectronic devices. Owing to the different carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::824642a1745642f8f1cda625edbb8a0c
https://doi.org/10.1166/jnn.2021.19257
https://doi.org/10.1166/jnn.2021.19257
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 16:1412-1416
Amorphous IGZO (a-IGZO) has been proved to be a suitable material for the channel layer in a thin film transistor, showing high mobility even in low temperature fabrication, device electrical characteristic exceeds a-Si or other metal oxide semicondu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50628a4be3dabb6ececd43c7d919528c
https://doi.org/10.1166/jno.2021.3086
https://doi.org/10.1166/jno.2021.3086