Zobrazeno 1 - 10
of 109
pro vyhledávání: '"Kovchavtsev, A."'
Autor:
Bazovkin, V.M., Dvoretsky, S.A., Guzev, A.A., Kovchavtsev, A.P., Marin, D.V., Polovinkin, V.G., Sabinina, I.V., Sidorov, G.Yu., Tsarenko, A.V., Vasil’ev, V.V., Varavin, V.S., Yakushev, M.V.
Publikováno v:
In Infrared Physics and Technology May 2016 76:72-74
Autor:
Kovchavtsev, A.P., Guzev, A.A., Tsarenko, A.V., Panova, Z.V., Yakushev, M.V., Marin, D.V., Varavin, V.S., Vasilyev, V.V., Dvoretsky, S.A., Sabinina, I.V., Sidorov, Yu.G.
Publikováno v:
In Infrared Physics and Technology November 2015 73:312-315
Autor:
Kovchavtsev, A. P.1 (AUTHOR), Aksenov, M. S.1,2 (AUTHOR) m.se.aksenov@gmail.com, Nastov'yak, A. E.1 (AUTHOR), Valisheva, N. A.1 (AUTHOR), Gorshkov, D. V.1 (AUTHOR), Sidorov, G. Yu.1 (AUTHOR), Dmitriev, D. V.1 (AUTHOR)
Publikováno v:
Technical Physics Letters. May2020, Vol. 46 Issue 5, p469-472. 4p.
Publikováno v:
Technical Physics Letters. 47:478-481
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8271e84017f83008f114f051dec5779d
https://doi.org/10.1134/s1063785021050175
https://doi.org/10.1134/s1063785021050175
Autor:
A. E. Nastov’yak, A. P. Kovchavtsev, M. S. Aksenov, D. V. Gorshkov, G. Yu. Sidorov, Dmitriy V. Dmitriev, N. A. Valisheva
Publikováno v:
Technical Physics Letters. 46:469-472
The C–V characteristics of Au/Al2O3/In0.52Al0.48As and Au/SiO2/In0.52Al0.48As metal–insulator–semiconductor structures have been studied. It has been established that the fragmentary measurement of the C–V characteristics of InAlAs-based meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df362ea9215b1d428abb8585ee327ba1
https://doi.org/10.1134/s1063785020050259
https://doi.org/10.1134/s1063785020050259
Autor:
A. P. Kovchavtsev, Yu. G. Sidorov, Anton Latyshev, I. V. Sabinina, A. V. Predein, I. V. Marchishin, G. Yu. Sidorov, V. S. Varavin, V. G. Remesnik, D. V. Marin, M. V. Yakushev, V. V. Vasil’ev, Sergey A. Dvoretsky
Publikováno v:
Journal of Communications Technology and Electronics. 65:316-320
Matrix photosensitive elements based on a HgCdTe semiconductor solid solution on silicon substrates with 640 × 512 elements at a pitch of 25 μm with a long-wavelength sensitivity of 5 μm at half maximum are designed and produced. The scheme and to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d7c4da38cacfb65f5c94779c800ab5
https://doi.org/10.1134/s1064226920030122
https://doi.org/10.1134/s1064226920030122
Publikováno v:
In Applied Surface Science 2010 256(14):4626-4632
Autor:
S. A. Dvoretsky, S Makarov Yu., A.P. Kovchavtsev, A. V. Zverev, V. M. Bazovkin, Sidorov G. Yu., D V Fromichev, I A Smirnov, A V Gluchov, M. V. Yakushev
Publikováno v:
RADIO COMMUNICATION TECHNOLOGY. :88-102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c46c4cdf95c9958c59c0c808ac2c8b6e
https://doi.org/10.33286/2075-8693-2019-40-88-102
https://doi.org/10.33286/2075-8693-2019-40-88-102
Autor:
Kovchavtsev, A. P., Aksenov, M. S., Tsarenko, A. V., Nastovjak, A. E., Pogosov, A. G., Pokhabov, D. A., Tereshchenko, O. E., Valisheva, N. A.
Publikováno v:
Journal of Applied Physics; 2018, Vol. 123 Issue 17, pN.PAG-N.PAG, 6p, 4 Graphs
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