Zobrazeno 1 - 10
of 320
pro vyhledávání: '"Kovalyuk Z. D."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2, Pp 3-8 (2018)
The n-InSe nanocomposite material was obtained by the method of intercalation of the InSe layered single crystal from a melt of RbNO3 ferroelectric salt, which can be used for the production of a high-specific capacitance photoconductor. X-ray analys
Externí odkaz:
https://doaj.org/article/3c7b3bbcf2a248f1a4e29503b59d038e
Autor:
Kovalyuk Z. D., Katerynchuk V. M., Kudrynskyi Z. R., Kushnir B. V., Netyaga V. V., Khomyak V. V.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 50-54 (2015)
The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure. Indium monoselenide (InSe) is a semiconductor of the A3B6 group of layered compo
Externí odkaz:
https://doaj.org/article/3317e04ac85d4b9ca068c7b3c70cd778
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 29-33 (2012)
The article describes the research of the influence of electrons with an effective energy of 12 MeV in the 0,33—33 Mrad dose range on the electrical and photovoltaic properties of photodiodes with «intrinsic oxide — p-InSe» structure. It has be
Externí odkaz:
https://doaj.org/article/41ded4d4ec774e3a9be462ab8cd1f1b9
Autor:
Kudrynskyi Z. R., Kovalyuk Z. D.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 40-43 (2012)
The article presents a method of creating heterojunc¬tions based on semiconductors with different lattice types. Substrates manufactured from GaSe and InSe layered crystals were annealed in Zn vapor. This way, n-ZnSe–p-GaSe and n-ZnSe–p-InSe het
Externí odkaz:
https://doaj.org/article/76d60a67ae424db680e5567ccb78e224
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2, Pp 3-8 (2009)
The results of investigation of the operating characteristics of the electrochemical system Li/Cu4Bi5S10 are presented. The mechanism of the current forming reaction is established. The impedance spectra of Li/Cu4Bi5S10 cells are investigated and ana
Externí odkaz:
https://doaj.org/article/33ac6ccf9d2749d488358366960e68cf
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3, Pp 6-8 (2010)
The compound GaSe is obtained by the technique of intercalation of a GaSe single crystal in a melt of the ferroelectric salt KNO3. The x-ray analysis of its crystal structure has been carried out and dielectric frequency characteristics of samples ha
Externí odkaz:
https://doaj.org/article/2af6061d083b4cde84f79d581cde927f
Autor:
Ceferino, A., Magorrian, S. J., Zólyomi, V., Bandurin, D. A., Geim, A. K., Patanè, A., Kovalyuk, Z. D., Kudrynskyi, Z. R., Grigorieva, I. V., Fal'ko, V. I.
Publikováno v:
Phys. Rev. B 104, 125432 (2021)
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $\gamma$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrin
Externí odkaz:
http://arxiv.org/abs/2106.04719
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1, Pp 61-62 (2009)
InS/InSe heterostructures were created by a long-term (during 120 h) thermal processing of InSe monocrystals in sulfur vapor. Investigations of electrical and photoelectric properties of structures manufactured by this method showed essential advanta
Externí odkaz:
https://doaj.org/article/911a3a0c5d3f4fa8942f94753e66c21a
Autor:
Osiekowicz, M., Staszczuk, D., Olkowska-Pucko, K., Kipczak, Ł., Grzeszczyk, M., Zinkiewicz, M., Nogajewski, K., Kudrynskyi, Z. R., Kovalyuk, Z. D., Patané, A., Babiński, A., Molas, M. R.
Publikováno v:
Scientific Reports 11, 924 (2021)
The temperature effect on the Raman scattering efficiency is investigated in $\varepsilon$-GaSe and $\gamma$-InSe crystals. We found that varying the temperature over a broad range from 5 K to 350 K permits to achieve both the resonant conditions and
Externí odkaz:
http://arxiv.org/abs/2010.12891
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