Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Kovalyuk, Zakhar D."'
Autor:
Venanzi, Tommaso, Selig, Malte, Pashkin, Alexej, Winnerl, Stephan, Katzer, Manuel, Arora, Himani, Erbe, Artur, Patanè, Amalia, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Baldassarre, Leonetta, Knorr, Andreas, Helm, Manfred, Schneider, Harald
A promising route for the development of opto-elelctronic technology is to use terahertz radiation to modulate the optical properties of semiconductors. Here we demonstrate the dynamical control of photoluminescence (PL) emission in few-layer InSe us
Externí odkaz:
http://arxiv.org/abs/2202.09156
Autor:
Venanzi, Tommaso, Arora, Himani, Winnerl, Stephan, Pashkin, Alexej, Chava, Phanish, Patanè, Amalia, Kovalyuk, Zakhar D., Kudrynskyi, Zalhar R., Watanabe, Kenji, Taniguchi, Takashi, Erbe, Artur, Helm, Manfred, Schneider, Harald
We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL lineshape, we dis
Externí odkaz:
http://arxiv.org/abs/2003.12304
Autor:
Lv, Quanshan, Yan, Faguang, Mori, Nobuya, Zhu, Wenkai, Hu, Ce, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Patanè, Amalia, Wang, Kaiyou
Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of de
Externí odkaz:
http://arxiv.org/abs/2001.10273
Autor:
Ubrig, Nicolas, Ponomarev, Evgeniy, Zultak, Johanna, Domaretskiy, Daniil, Zólyomi, Viktor, Terry, Daniel, Howarth, James, Gutiérrez-Lezama, Ignacio, Zhukov, Alexander, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Patanè, Amalia, Taniguchi, Takashi, Watanabe, Kenji, Gorbachev, Roman V., Fal'ko, Vladimir I., Morpurgo, Alberto F.
Publikováno v:
Nature Materials (2020)
Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into interfaces and heterostructures. Their potential for optoelectronics stem
Externí odkaz:
http://arxiv.org/abs/1912.10345
Autor:
Sreepal, Vishnu, Yagmurcukardes, Mehmet, Vasu, Kalangi S., Kelly, Daniel J., Taylor, Sarah F. R., Kravets, Vasyl G., Kudrynskyi, Zakhar, Kovalyuk, Zakhar D., Patanè, Amalia, Grigorenko, Alexander N., Haigh, Sarah J., Hardacre, Christopher, Eaves, Laurence, Sahin, Hasan, Geim, Andre K., Peeters, Francois M., Nair, Rahul R.
Publikováno v:
Nano Lett.2019, 19, 6475, 2019
Most of the studied two-dimensional (2D) materials have been obtained by exfoliation of van der Waals crystals. Recently, there has been growing interest in fabricating synthetic 2D crystals which have no layered bulk analogues. These efforts have be
Externí odkaz:
http://arxiv.org/abs/1908.07357
Autor:
Lee, Yongjin, Pisoni, Riccardo, Overweg, Hiske, Eich, Marius, Rickhaus, Peter, Patanè, Amalia, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar. D., Gorbachev, Roman, Watanabe, Kenji, Taniguchi, Takashi, Ihn, Thomas, Ensslin, Klaus
Publikováno v:
2D Mater. 5 035040,2018
In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the c
Externí odkaz:
http://arxiv.org/abs/1805.10946
Autor:
Hamer, Matthew, Tóvári, Endre, Zhu, Mengjian, Thompson, Michael D., Mayorov, Alexander, Prance, Jonathon, Lee, Yongjin, Haley, Richard P., Kudrynskyi, Zakhar R., Patanè, Amalia, Terry, Daniel, Kovalyuk, Zakhar D., Ensslin, Klaus, Kretinin, Andrey V., Geim, Andre, Gorbachev, Roman
Publikováno v:
Nano Lett., 2018, 18 (6), p 3950
Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here w
Externí odkaz:
http://arxiv.org/abs/1805.05896
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