Constant and Switched Bias Low Frequency Noise in p-MOSFETs with Varying Gate Oxide Thickness

Autor: Kolhatkar, J.S., Salm, Cora, Knitel, M.J., Wallinga, Hans, Kovalguine, A.

Publikováno v: Proceedings of the 32nd European Solid-State Device Research Conference, 83-86
STARTPAGE=83;ENDPAGE=86;TITLE=Proceedings of the 32nd European Solid-State Device Research Conference

The low-frequency noise power spectral density of MOSFETs is decreased if the MOSFETs are periodically switched "off" (switched bias conditions). The influence of the gate oxide thickness on fixed bias and switched biased low frequency drain current

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3afb288aeca3f598f98096380c645bd7
https://doi.org/10.1109/essderc.2002.194876