Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Kouta Takahashi"'
Publikováno v:
Journal of Physical Therapy Science. 35:414-420
Autor:
Shungo Goto, Kazuhiro Atsukawa, Yuriko Takeuchi, Nobuyoshi Kawamura, Kouta Takahashi, Tetsuya Tamura, Akito Iwasaki, Kou Suzuki, Leo Taniguchi, Kouki Nagai, Hisakuni Tomonari, Tadahiko Shiba, Akihiko Chida
Publikováno v:
Kanzo. 61:470-477
Publikováno v:
2021 International Symposium on Micro-NanoMehatronics and Human Science (MHS).
Publikováno v:
Advances in Intelligent Networking and Collaborative Systems ISBN: 9783030849092
INCoS
INCoS
Recently, virtual machines (VMs) with a large amount of memory are widely used. It is often not easy to migrate such a large-memory VM because VM migration requires one large destination host. To address this issue, split migration divides the memory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e27ec85085b5b3c170396c86ec2fa69
https://doi.org/10.1007/978-3-030-84910-8_32
https://doi.org/10.1007/978-3-030-84910-8_32
Autor:
Kouta Takahashi, Taisei Iwahashi, Yukihiro Imai, Masashi Kurosawa, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima
Publikováno v:
ECS Transactions. 86:321-328
Autor:
Masashi Kurosawa, Shunsuke Oba, Shuichiro Hashimoto, Takanobu Watanabe, Atsushi Ogura, Motohiro Tomita, Kouta Takahashi, Ryo Yokogawa
Publikováno v:
ECS Transactions. 86:87-93
To achieve high thermoelectric performance, laterally graded silicon germanium (SiGe) wires were fabricated by rapid melting growth (RMG) method. In addition, the structure evaluation of the RMG laterally graded SiGe wire were performed by Raman spec
Autor:
Fumiaki Sato, Kouta Takahashi
Publikováno v:
Advances in Intelligent Systems and Computing ISBN: 9783319936581
CISIS
CISIS
To prevent leakage and misuse of data stored in the cloud, a secure computation method that can calculate encrypted data has been studied. Though early secure computations were not practical due to large computation times, secure multiparty computati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fc38f4713f4369075d934d46e19b52f
https://doi.org/10.1007/978-3-319-93659-8_40
https://doi.org/10.1007/978-3-319-93659-8_40
Autor:
Yukihiro Imai, Tatsuro Maeda, Masashi Kurosawa, Kouta Takahashi, Noriyuki Uchida, Osamu Nakatsuka, Shigeaki Zaima
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
Thermoelectric properties of Ge 0.95 Sn 0.05 layers with various Ga concentrations (1018–1020 cm−3) grown on GaAs and Si by LTMBE have been investigated. Even for single-crystalline layers, the thermal conductivity has been reduced down to 2.5 Wm
Autor:
Hiroshi Ikenoue, Mitsuo Sakashita, Shigeaki Zaima, Kouta Takahashi, Osamu Nakatsuka, Masashi Kurosawa
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
We have investigated thermoelectric (TE) properties of poly-Ge}_{1-x}Sn}_{x} layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK−2m−1 were obtained for p- and n
Autor:
Shunsuke Oba, Takanobu Watanabe, Kouta Takahashi, Shuichiro Hashimoto, Motohiro Tomita, Masashi Kurosawa, Takuya Terada, Masataka Ogasawara
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the