Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Koushi Hotta"'
Autor:
Ryosuke Aonuma, Isao Makabe, Koushi Hotta, Yasuyuki Miyamoto, Shigeki Yoshida, Akihiro Hayasaka
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Insulator deposition directly on the GaN channel is necessary for the reduction of gate leakage current in N-polar GaN HEMTs. For higher speed, a thinner insulator is preferable. Therefore, the N-polar GaN HEMT with Al 2 O 3 gate insulator was fabric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ba817709d77d36482b5f1af1e649cc5
https://doi.org/10.1109/iciprm.2019.8819128
https://doi.org/10.1109/iciprm.2019.8819128
Autor:
Koushi Hotta, Yasuyuki Miyamoto, Isao Makabe, Kosuke Itagaki, Yumiko Tomizuka, Shigeki Yoshida
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCD14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5c404b1f93281553745a3268de35cf5
https://doi.org/10.7567/1347-4065/ab1063
https://doi.org/10.7567/1347-4065/ab1063