Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Kouji Ohtsuka"'
Publikováno v:
Journal of Applied Physics. 87:2285-2288
The effects of hydrogen plasma treatment and postannealing on GaAs solar cells on Si substrates have been investigated. It is found that postannealing temperature is an important parameter to obtain GaAs on Si with a long minority carrier lifetime. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0612c6058c17fdc3d2dc106a7d27960f
https://doi.org/10.1063/1.372174
https://doi.org/10.1063/1.372174
Publikováno v:
Journal of Applied Physics. 79:439-445
Spectroscopic‐ellipsometry (SE) and thermoreflectance (TR) spectra of (AlxGa1−x)0.5In0.5P quaternary alloys are presented. Both measurements are carried out on the same samples in the 1–6 eV photon‐energy range at room temperature. These spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a433ff642003c0bd0470be7c5b23a9
https://doi.org/10.1063/1.360850
https://doi.org/10.1063/1.360850
Publikováno v:
Japanese Journal of Oral & Maxillofacial Surgery. 44:226-228
Catheter-related infection is the most common, serious complication in patientsreceiving intravenous hyperalimentation (IVH). We investigated catheter-related infections during IVH. All patients who underwent catheterization at the department of oral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27ec9e4668e052e97c250ca016aa49f4
https://doi.org/10.5794/jjoms.44.226
https://doi.org/10.5794/jjoms.44.226
Publikováno v:
Journal of Applied Physics. 75:478-480
Refractive‐index dispersion in (AlxGa1−x)0.5In0.5P quaternary alloys has been measured at room temperature in the 1.2–2.9 eV photon‐energy range by using spectroscopic ellipsometry. The measured data are fitted to the first‐order Sellmeier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2314110d431c372d3c8e915cfdff4731
https://doi.org/10.1063/1.355824
https://doi.org/10.1063/1.355824
Publikováno v:
Journal of Japan Society of Civil Engineers, Ser. D3 (Infrastructure Planning and Management). 69:I_745-I_751
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a722bf7e50d14c228d57b9e0c5228436
https://doi.org/10.2208/jscejipm.69.i_745
https://doi.org/10.2208/jscejipm.69.i_745
Publikováno v:
Japanese Journal of Applied Physics. 41:L663-L664
We report significantly improved characteristics of InGaN multiple-quantum well blue and green light-emitting diodes (LEDs) on Si (111) substrates using metalorganic chemical vapor deposition. A high-temperature-grown thin AlN layer and AlN/GaN multi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fef1dca07a12e29204ed70df7b4e11ee
https://doi.org/10.1143/jjap.41.l663
https://doi.org/10.1143/jjap.41.l663
Publikováno v:
Japanese Journal of Applied Physics. 38:3504
The effects of hydrogen (H) plasma passivation of metalorganic chemical vapor deposition (MOCVD) grown GaAs solar cells on a Si substrate have been studied. After H plasma passivation and postannealing in AsH3 ambient, the conversion efficiency of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60876468229bc258ba49033f94374c6f
https://doi.org/10.1143/jjap.38.3504
https://doi.org/10.1143/jjap.38.3504
Publikováno v:
Japanese Journal of Applied Physics. 35:537
Electroreflectance spectroscopy has been applied to the study of (Al x Ga1- x )0.5In0.5P quaternary systems lattice-matched to GaAs. The measurements are made at room temperature in the photon-energy range of 1.7–5.8 eV. The composition dependence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4dc54715519247bbfffd252bd626a3b
https://doi.org/10.1143/jjap.35.537
https://doi.org/10.1143/jjap.35.537
Publikováno v:
Japanese Journal of Applied Physics. 33:186
The dielectric function spectraε(E) of (AlxGa1-x)0.5In0.5P quaternary alloys lattice-matched to GaAs have been measured at room temperature in the 1.2–5.5-eV photon-energy range using spectroscopic ellipsometry (SE). The measured SE spectra show d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b849d33cdc773a8e4700d3744ba34bb
https://doi.org/10.1143/jjap.33.186
https://doi.org/10.1143/jjap.33.186