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Autor:
Kouichirou Akasaka, Takayuki Ohkubo, Wataru Terashima, Song-Bek Che, Yoshihiro Ishitani, M. Yoshitani, Naoki Hashimoto, Akihiko Yoshikawa
Publikováno v:
physica status solidi (c). 2:2258-2262
We studied the fabrication of InN/GaN single-quantum well (SQW) and double hetero (DH) structures by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) system with in-situ monitoring of spectroscopic ellipsometry (SE) and reflection