Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Kouichirou Adachi"'
Autor:
Yasuhito Gotoh, Junzo Ishikawa, Nobutoshi Arai, Kouichirou Adachi, Hiroshi Tsuji, Hiroshi Kotaki, Hiroyuki Nakatsuka, Kenji Kojima, Toyotsugu Ishibashi
Publikováno v:
Materials Science and Engineering: B. 147:230-234
Ge− ions were implanted into SiO2 layer three times by changing the energy of 50, 20 and 10 keV in this order to form germanium nanoparticles at a relatively wide-depth region. Then, the sample was annealed at 600–900 °C for 1 h. Although Ge nan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36045055cc9297def215e96fde06f978
https://doi.org/10.1016/j.mseb.2007.08.023
https://doi.org/10.1016/j.mseb.2007.08.023
Autor:
Yasuhito Gotoh, Hiroshi Tsuji, Kouichirou Adachi, Nobutoshi Arai, Hiroshi Kotaki, Junzo Ishikawa
Publikováno v:
Japanese Journal of Applied Physics. 46:6260-6266
Silver negative ion implantation into 50- and 25-nm-thick SiO2 film on Si and subsequent heat treatment were conducted to form nanoparticles. Optical properties showed formation of Ag nanoparticles in the films. Transmission electron microscope (TEM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::600a7e328a8fc5acbc7275dd2d854b93
https://doi.org/10.1143/jjap.46.6260
https://doi.org/10.1143/jjap.46.6260
Autor:
Takashi Minotani, Nobutoshi Arai, Yasuhito Gotoh, Kouichirou Adachi, Tetsuya Okumine, Naoyuki Gotoh, Hiroshi Tsuji, Hiroshi Kotaki, Toyotsugu Ishibashi, Junzo Ishikawa
Publikováno v:
Surface and Coatings Technology. 201:8312-8316
The depth profile is a very important information for nanoparticle formation in very thin SiO 2 films by ion implantation prior to TEM observation, because of the thermal diffusion of implanted atoms. Here, we have investigated depth profiles of Ge a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0195d82403254d5c74efe37dcdde0558
https://doi.org/10.1016/j.surfcoat.2006.01.089
https://doi.org/10.1016/j.surfcoat.2006.01.089
Autor:
Junzo Ishikawa, Nobutoshi Arai, Toyotsugu Ishibashi, Yasuhito Gotoh, Kouichirou Adachi, Kenji Kojima, Takashi Minotani, Hiroyuki Nakatsuka, Hiroshi Kotaki, Hiroshi Tsuji
Publikováno v:
Transactions of the Materials Research Society of Japan. 32:907-910
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dffd9d0b291d5dc335c9116c655bb317
https://doi.org/10.14723/tmrsj.32.907
https://doi.org/10.14723/tmrsj.32.907
Publikováno v:
Journal of Photopolymer Science and Technology. 9:601-610
SiN, Bare Si, and SiO2 substrate-effects in chemically amplified (CA) resist have been investigated by surface analysis and evaluating the pattern profile of CA negative tone resist. It is considered that substrate-effects are distinguished from adhe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cb071549e9c999bfcedeb4a017ad24f
https://doi.org/10.2494/photopolymer.9.601
https://doi.org/10.2494/photopolymer.9.601
Autor:
S. Kakimoto, K. Sugimoto, N. Hashizume, Masayuki Nakano, Hiroshi Kotaki, Kenji Ohta, A. Shibata, Kouichirou Adachi
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
We have developed a novel high speed dynamic threshold voltage MOSFET named LCSED for ultra low power operation. This was realized using sidewall elevated drain. The LCSED achieved the following excellent characteristics as compared to the bulk-DTMOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9997dd688dec0bd23b1f9a89930b916
https://doi.org/10.1109/iedm.1998.746387
https://doi.org/10.1109/iedm.1998.746387
Autor:
S. Hayashida, Toshimasa Matsuoka, T. Nakano, J. Takagi, S. Morishita, M. Yamanaka, Y. Sato, S. Kakimoto, Hiroshi Kotaki, Keiichiro Uda, K. Sugimoto, T. Ogura, Kouichirou Adachi
Publikováno v:
Proceedings of International Electron Devices Meeting.
Dual gate CMOSFETs with high performance were successfully realized by using 2.8 nm N/sub 2/O-oxynitrides as gate dielectrics. Unlike other fabrication procedures, /sup 11/B/sup +/ ions instead of /sup 49/BF/sub 2//sup +/ were implanted into the gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b64159f198e60fbb37ff2a79af2e4ce4
https://doi.org/10.1109/iedm.1995.499350
https://doi.org/10.1109/iedm.1995.499350
Autor:
Junzo Ishikawa, Nobutoshi Arai, Hiroshi Kotaki, Hiroshi Tsuji, Masanori Motono, Yasuhito Gotoh, Kouichirou Adachi
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
Ag nanoparticles with diameter about 3 nm were formed in center region of 50-nm-thick SiO2 thin film on Si substrate by silver negative-ion implantation. These metal nanoparticles are expected their application to single electron devices. Silver nega
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21ee273c26d8f54bfe5d132d3112e74a
https://doi.org/10.1109/iit.2002.1258099
https://doi.org/10.1109/iit.2002.1258099
Autor:
Yukio Yasuda, A. Kito, Akira Sakai, S. Kakimoto, T. Ogura, A. Shibata, Shigeaki Zaima, Kouichirou Adachi, Hiroshi Kotaki, Nobutoshi Arai
Publikováno v:
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22feb952bd77d19e7ca2a759e8a52152
https://doi.org/10.7567/ssdm.2002.f-7-5
https://doi.org/10.7567/ssdm.2002.f-7-5
Autor:
Shigeyasu Mori, Keichiro Uda, Takeo Watanabe, Takashi Fukushima, Yuichi Sato, Kouichirou Adachi
Publikováno v:
SPIE Proceedings.
SiN substrate effect in chemically amplified (CA) resist has been investigated by surface analysis and evaluating the pattern profile of CA negative tone resist. Fine profile can be replicated on SiN substrate treated with oxygen plasma optimized con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3223c7973a476c873fb09ba10952ba62
https://doi.org/10.1117/12.241812
https://doi.org/10.1117/12.241812