Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Kouichiro Adachi"'
Autor:
Nobutoshi Arai, Takashi Minotani, Hiroshi Kotaki, Junzo Ishikawa, Yasuhito Gotoh, Naoyuki Gotoh, Kouichiro Adachi, Tetsuya Okumine, Toyotsugu Ishibashi, Hiroshi Tsuji
Publikováno v:
Surface and Coatings Technology. 201:8516-8520
Germanium nanoparticles were formed in thin silicon dioxide by using negative-ion implantation, which has the advantage of being almost "charge-up free" even in insulators, resulting in the achievement of precise controls in depth and fluence without
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df025e9bf75f6406df7987173189fa88
https://doi.org/10.1016/j.surfcoat.2006.02.063
https://doi.org/10.1016/j.surfcoat.2006.02.063
Autor:
Junzo Ishikawa, Naoyuki Gotoh, Kenji Kojima, Kouichiro Adachi, Toyotsugu Ishibashi, Takashi Minotani, Hiroshi Tsuji, Nobutoshi Arai, Yasuhito Gotoh, H Kotaki
Publikováno v:
Journal of Physics: Conference Series. 61:1196-1201
Ge nanoparticles (NPs) embedded silicon oxide is expected to be promising light emission source, especially, UV – blue light region. We have tried to form Ge NPs in a 100- nm-thick SiO2 layer on Si substrate by multi-energy implantation of Ge negat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b133912e6464835791d10cf31323a72b
https://doi.org/10.1088/1742-6596/61/1/236
https://doi.org/10.1088/1742-6596/61/1/236
Autor:
Nobutoshi Arai, Junzo Ishikawa, H Kotaki, Takashi Minotani, Kouichiro Adachi, Naoyuki Gotoh, Hiroshi Tsuji, Toyotsugu Ishibashi, Yasuhito Gotoh
Publikováno v:
Journal of Physics: Conference Series. 61:41-45
Ion implantation technique is useful method to dope atoms in a thin layer to make nanoparticles. However, the thermal annealing is required for recovering ion-induced damages and growing NPs. Therefore, the redistribution of implanted atoms in the la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05f390bd1dbbda3702e6d9b4a1243167
https://doi.org/10.1088/1742-6596/61/1/009
https://doi.org/10.1088/1742-6596/61/1/009
Autor:
Nobutoshi Arai, Kouichiro Adachi, Hiroshi Kotaki, Hiroshi Tsuji, Junzo Ishikawa, Toyotsugu Ishibashi, Takashi Minotani, Naoyuki Gotoh, Kenji Kojima, Yasuhito Gotoh
Publikováno v:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 257:94-98
We have investigated germanium nanoparticle formation in a 25-nm-thick oxide layer on silicon substrate by negative-ion implantation for single electron devices. Ge negative-ions were implanted into the oxide layer at 10 keV with fluences of 1 × 101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d81a2d0c481a42f83479135a1ac2c90e
http://hdl.handle.net/2433/67203
http://hdl.handle.net/2433/67203
Autor:
Nobutoshi Arai, Junzo lshikawa, Takashi Minotani, Kouichiro Adachi, Kenji Kojima, Naoyuki Gotoh, Katsumi Takahiro, Hiroshi Kotaki, Toyogi Ishibashi, Yasuhito Gotoh, Hiroshi Tsuji
Publikováno v:
Transactions of the Materials Research Society of Japan. 32:903-906
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::936ac9f2e7ec16cd8e0224679e294da6
https://doi.org/10.14723/tmrsj.32.903
https://doi.org/10.14723/tmrsj.32.903
Autor:
Takuya Matsumoto, Kouichiro Adachi, Yasuhito Gotoh, Nobutoshi Arai, Hiroshi Tsuji, Junzo Ishikawa, Hiroshi Kotaki, Naoyuki Gotoh, Kazuya Ueno
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 242:125-128
Mono-layered gold nanoparticles just below the surface of silicon oxide film have been formed by a gold negative-ion implantation at a very low-energy, where the deviation of implanted atoms was sufficiently narrow comparing to the size of nanopartic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8804d707beb6e9010533d36f8893448
https://doi.org/10.1016/j.nimb.2005.08.103
https://doi.org/10.1016/j.nimb.2005.08.103
Autor:
Kazuya Ueno, Junzo Ishikawa, Nobutoshi Arai, Takuya Matsumoto, Kouichiro Adachi, Hiroshi Tsuji, Yasuhito Gotoh, Hiroshi Kotaki
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:422-427
Two formation methods of delta-layered metal nanoparticles in thermally grown thin SiO 2 layer on Si substrate were investigated: (1) gold negative-ion implantation at low-energy for nanoparticle formation at a shallow depth of the oxide layer and (2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::982fe05cfb1a85e5ae35eabe8293daac
https://doi.org/10.1016/j.nimb.2005.05.028
https://doi.org/10.1016/j.nimb.2005.05.028
Autor:
Kouichiro Adachi, Junzo Ishikawa, Hiroshi Kotaki, Yasuhito Gotoh, Hiroshi Tsuji, Takuya Matsumoto, Nobutoshi Arai, Kazuya Ueno
Publikováno v:
Surface and Coatings Technology. 196:44-49
Metal nanoparticles in application for silicon based single electron devices are formed in a thin SiO 2 layer such as gate oxide layer on silicon substrate. The TEM observation is reliable but takes much effort and a long time for obtaining informati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e78e7c2848e4abf88590d578f977e43d
https://doi.org/10.1016/j.surfcoat.2004.08.090
https://doi.org/10.1016/j.surfcoat.2004.08.090
Autor:
Kazuya Ueno, Hiroshi Tsuji, Yasuhito Gotoh, Junzo Ishikawa, Takuya Matsumoto, Kouichiro Adachi, Hiroshi Kotaki, Nobutoshi Arai
Publikováno v:
SURFACE & COATINGS TECHNOLOGY. 196(1-3):39-43
Two formation methods of nanoparticles distributed at a certain depth in a delta layer by negative ion implantation were investigated. Such delta layer formation of isolated metal nanoparticles is desired in a very thin gate oxide film, with thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b6a8dba3f9d2db5e362e2b732257357
http://hdl.handle.net/2433/7948
http://hdl.handle.net/2433/7948
Autor:
Kouichiro Adachi, Takuya Matsumoto, Kazuya Ueno, Hiroshi Tsuji, Yasuhito Gotoh, Nobutoshi Arai, Junzo Ishikawa, Hiroshi Kotaki
Publikováno v:
APPLIED SURFACE SCIENCE. 238(1-4):132-137
Formation of silver nanoparticles formed by silver negative-ion implantation in a thin SiO 2 layer and its I – V characteristics were investigated for development single electron devices. In order to obtain effective Coulomb blockade phenomenon at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cbb8d6c27e8073569a26e33c0e8053f
http://hdl.handle.net/2433/7949
http://hdl.handle.net/2433/7949