Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Kouichi Fukaya"'
Autor:
Shuuji Kunisaki, Shigeru Tominaga, Kouichi Fukaya, Seiichi Kondo, Kouji Yamada, Masahisa Fujita, Taro Enomoto, Tadakazu Miyazaki, Daisuke Abe
Publikováno v:
Microelectronic Engineering. 84:2615-2619
Both chemical and mechanical damages to porous SiOC film should be minimized in the Cu-CMP (chemical mechanical polishing) process for the 32-45nm node Cu interconnect process. This paper first discusses chemical damage that occurs during direct CMP
Autor:
Kouichi Fukaya, Manabu Tsujimura
Publikováno v:
The Proceedings of Conference of Kanto Branch. :257-258