Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Kotin IA"'
Autor:
Popov VI; Institute of Physics and Technologies, North-Eastern Federal University, Yakutsk 677027, Russia. volts@mail.ru., Kotin IA; Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia. kotin@isp.nsc.ru., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia. nadonebo@gmail.com.; Department of Physics, Novosibirsk State University, Novosibirsk 630090, Russia. nadonebo@gmail.com., Smagulova SA; Institute of Physics and Technologies, North-Eastern Federal University, Yakutsk 677027, Russia. smagulova@mail.ru., Antonova IV; Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Department of Physics, Novosibirsk State University, Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, Novosibirsk 630073, Russia. antonova@isp.nsc.ru.
Publikováno v:
Materials (Basel, Switzerland) [Materials (Basel)] 2019 Oct 24; Vol. 12 (21). Date of Electronic Publication: 2019 Oct 24.
Autor:
Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, 630090, Novosibirsk, Russia., Nebogatikova NA, Kotin IA, Smagulova SA, Antonova IV
Publikováno v:
Nanotechnology [Nanotechnology] 2019 Jun 21; Vol. 30 (25), pp. 255701. Date of Electronic Publication: 2019 Mar 05.
Autor:
Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, Acad. Lavrentiev Avenue 13, Novosibirsk 630090, Russia. aiivanov@isp.nsc.ru nadonebo@gmail.com., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics SB RAS, Acad. Lavrentiev Avenue 13, Novosibirsk 630090, Russia. aiivanov@isp.nsc.ru nadonebo@gmail.com., Kotin IA; Rzhanov Institute of Semiconductor Physics SB RAS, Acad. Lavrentiev Avenue 13, Novosibirsk 630090, Russia. aiivanov@isp.nsc.ru nadonebo@gmail.com., Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, Acad. Lavrentiev Avenue 13, Novosibirsk 630090, Russia. aiivanov@isp.nsc.ru nadonebo@gmail.com and Novosibirsk State University, 630090, Pirogov Street 6, Novosibirsk, Russia and Novosibirsk State Technical University, 630073, K. Marx Avenue 20, Novosibirsk, Russia.
Publikováno v:
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2017 Jul 26; Vol. 19 (29), pp. 19010-19020.
Autor:
Antonova IV; A V Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Prospekt Lavrentieva 13, 630090 Russia. antonova@isp.nsc.ru, Kotin IA, Soots RA, Volodin VA, Prinz VY
Publikováno v:
Nanotechnology [Nanotechnology] 2012 Aug 10; Vol. 23 (31), pp. 315601. Date of Electronic Publication: 2012 Jul 13.